Samsung electronics co., ltd. (20250016993). SEMICONDUCTOR DEVICE: Difference between revisions
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==Inventor(s)== | ==Inventor(s)== | ||
[[:Category:Sung-Hwan Jang of Suwon-si | [[:Category:Sung-Hwan Jang of Suwon-si KR|Sung-Hwan Jang of Suwon-si KR]][[Category:Sung-Hwan Jang of Suwon-si KR]] | ||
[[:Category:Guifu Yang of Suwon-si | [[:Category:Guifu Yang of Suwon-si KR|Guifu Yang of Suwon-si KR]][[Category:Guifu Yang of Suwon-si KR]] | ||
[[:Category:Jinbum Kim of Suwon-si | [[:Category:Jinbum Kim of Suwon-si KR|Jinbum Kim of Suwon-si KR]][[Category:Jinbum Kim of Suwon-si KR]] | ||
[[:Category:Sunguk Jang of Suwon-si | [[:Category:Sunguk Jang of Suwon-si KR|Sunguk Jang of Suwon-si KR]][[Category:Sunguk Jang of Suwon-si KR]] | ||
==SEMICONDUCTOR DEVICE== | ==SEMICONDUCTOR DEVICE== | ||
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This abstract first appeared for US patent application 20250016993 titled 'SEMICONDUCTOR DEVICE | This abstract first appeared for US patent application 20250016993 titled 'SEMICONDUCTOR DEVICE | ||
==Original Abstract Submitted== | ==Original Abstract Submitted== | ||
Latest revision as of 08:37, 25 March 2025
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICE
This abstract first appeared for US patent application 20250016993 titled 'SEMICONDUCTOR DEVICE
Original Abstract Submitted
a semiconductor device includes a substrate including a recess region; a bit line contact in the recess region; a bit line on the bit line contact, the bit line extending in a first direction; a first insulating pattern covering side surfaces of the bit line contact and an inner surface of the recess region; and a second insulating pattern on the first insulating pattern, wherein an oxygen density of the first insulating pattern is higher than an oxygen density of the second insulating pattern.