Samsung electronics co., ltd. (20250089252). SEMICONDUCTOR DEVICES

SEMICONDUCTOR DEVICES

Organization Name

samsung electronics co., ltd.

Inventor(s)

Jongseon Ahn of Suwon-si (KR)

Hyunju Kim of Suwon-si (KR)

Jaehwang Sim of Suwon-si (KR)

Seulbi Lee of Suwon-si (KR)

SEMICONDUCTOR DEVICES

This abstract first appeared for US patent application 20250089252 titled 'SEMICONDUCTOR DEVICES

Original Abstract Submitted

a semiconductor device includes a gate electrode structure, a memory channel structure, and a contact plug. the gate electrode structure includes gate electrodes sequentially stacked and spaced apart from each other on a substrate in a first direction perpendicular to an upper surface of the substrate. each of the gate electrodes extends in a second direction substantially parallel to the upper surface of the substrate. the memory channel structure extends through the gate electrode structure. the contact plug extends partially through the gate electrode structure to contact an upper surface of a first gate electrode among the gate electrodes. the contact plug is electrically insulated from a second gate electrode that is over the first gate electrode. at least a portion of the contact plug has a width decreasing from a top toward a bottom thereof in the first direction in a stepwise manner.