Difference between revisions of "SanDisk Technologies LLC patent applications published on July 25th, 2024"
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==Patent applications for SanDisk Technologies LLC on July 25th, 2024== | ==Patent applications for SanDisk Technologies LLC on July 25th, 2024== | ||
Revision as of 07:49, 26 July 2024
Contents
- 1 Patent applications for SanDisk Technologies LLC on July 25th, 2024
- 1.1 MULTI-WAFER BONDING FOR NAND SCALING (18358644)
- 1.2 THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF INCLUDING EXPANDED SUPPORT OPENINGS AND DOUBLE SPACER WORD LINE CONTACT FORMATION (18358702)
- 1.3 HIGH VOLTAGE FIELD EFFECT TRANSISTORS WITH SUPERJUNCTIONS AND METHOD OF MAKING THE SAME (18356851)
- 1.4 THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF INCLUDING EXPANDED SUPPORT OPENINGS AND DOUBLE SPACER WORD LINE CONTACT FORMATION (18358727)
- 1.5 THREE-DIMENSIONAL MEMORY DEVICE CONTAINING ETCH STOP STRUCTURES FOR WORD LINE CONTACTS AND METHODS OF EMPLOYING THE SAME (18627993)
Patent applications for SanDisk Technologies LLC on July 25th, 2024
MULTI-WAFER BONDING FOR NAND SCALING (18358644)
Main Inventor
Hiroki Yabe
THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF INCLUDING EXPANDED SUPPORT OPENINGS AND DOUBLE SPACER WORD LINE CONTACT FORMATION (18358702)
Main Inventor
Ruogu Matthew ZHU
HIGH VOLTAGE FIELD EFFECT TRANSISTORS WITH SUPERJUNCTIONS AND METHOD OF MAKING THE SAME (18356851)
Main Inventor
Masashi ISHIDA
THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF INCLUDING EXPANDED SUPPORT OPENINGS AND DOUBLE SPACER WORD LINE CONTACT FORMATION (18358727)
Main Inventor
Ruogu Matthew ZHU
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING ETCH STOP STRUCTURES FOR WORD LINE CONTACTS AND METHODS OF EMPLOYING THE SAME (18627993)
Main Inventor
Toshiyuki ISOME