Difference between revisions of "Category:Ching-Shih MA"
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=== Executive Summary === | === Executive Summary === | ||
− | Ching-Shih MA is an inventor who has filed 2 patents. Their primary areas of innovation include | + | Ching-Shih MA is an inventor who has filed 2 patents. Their primary areas of innovation include {the electrode extending partially in or entirely through the semiconductor body} (1 patents), Roughened surfaces, e.g. at the interface between epitaxial layers (1 patents), Transparent materials (1 patents), and they have worked with companies such as Taiwan-Asia Semiconductor Corporation (2 patents). Their most frequent collaborators include [[Category:Kuo-Chen WU|Kuo-Chen WU]] (2 collaborations), [[Category:Kun-Te LIN|Kun-Te LIN]] (1 collaborations). |
=== Patent Filing Activity === | === Patent Filing Activity === | ||
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==== List of Technology Areas ==== | ==== List of Technology Areas ==== | ||
− | * [[:Category:CPC_H01L33/382|H01L33/382]] ( | + | * [[:Category:CPC_H01L33/382|H01L33/382]] ({the electrode extending partially in or entirely through the semiconductor body}): 1 patents |
− | * [[:Category:CPC_H01L33/22|H01L33/22]] ( | + | * [[:Category:CPC_H01L33/22|H01L33/22]] (Roughened surfaces, e.g. at the interface between epitaxial layers): 1 patents |
− | * [[:Category:CPC_H01L33/42|H01L33/42]] ( | + | * [[:Category:CPC_H01L33/42|H01L33/42]] (Transparent materials): 1 patents |
− | * [[:Category:CPC_H01L33/145|H01L33/145]] ( | + | * [[:Category:CPC_H01L33/145|H01L33/145]] ({with a current-blocking structure}): 1 patents |
− | * [[:Category:CPC_H01L33/38|H01L33/38]] ( | + | * [[:Category:CPC_H01L33/38|H01L33/38]] (with a particular shape): 1 patents |
=== Companies === | === Companies === |
Latest revision as of 09:39, 18 July 2024
Contents
Ching-Shih MA
Executive Summary
Ching-Shih MA is an inventor who has filed 2 patents. Their primary areas of innovation include {the electrode extending partially in or entirely through the semiconductor body} (1 patents), Roughened surfaces, e.g. at the interface between epitaxial layers (1 patents), Transparent materials (1 patents), and they have worked with companies such as Taiwan-Asia Semiconductor Corporation (2 patents). Their most frequent collaborators include (2 collaborations), (1 collaborations).
Patent Filing Activity
Technology Areas
List of Technology Areas
- H01L33/382 ({the electrode extending partially in or entirely through the semiconductor body}): 1 patents
- H01L33/22 (Roughened surfaces, e.g. at the interface between epitaxial layers): 1 patents
- H01L33/42 (Transparent materials): 1 patents
- H01L33/145 ({with a current-blocking structure}): 1 patents
- H01L33/38 (with a particular shape): 1 patents
Companies
List of Companies
- Taiwan-Asia Semiconductor Corporation: 2 patents
Collaborators
- Kuo-Chen WU (2 collaborations)
- Kun-Te LIN (1 collaborations)
Subcategories
This category has the following 3 subcategories, out of 3 total.