Difference between revisions of "SanDisk Technologies LLC patent applications published on November 30th, 2023"
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==Patent applications for SanDisk Technologies LLC on November 30th, 2023== | ==Patent applications for SanDisk Technologies LLC on November 30th, 2023== | ||
Revision as of 01:48, 6 December 2023
Contents
- 1 Patent applications for SanDisk Technologies LLC on November 30th, 2023
- 1.1 CHIP SELECT, COMMAND, AND ADDRESS ENCODING (17828921)
- 1.2 CROSS-POINT ARRAY REFRESH SCHEME (17824806)
- 1.3 HIGH SPEED MULTI-LEVEL CELL (MLC) PROGRAMMING IN NON-VOLATILE MEMORY STRUCTURES (17825048)
- 1.4 LOW POWER MULTI-LEVEL CELL (MLC) PROGRAMMING IN NON-VOLATILE MEMORY STRUCTURES (17825193)
- 1.5 NON-VOLATILE MEMORY WITH INTER-DIE CONNECTION (17825337)
- 1.6 METHOD TO OPTIMIZE FIRST READ VERSUS SECOND READ MARGIN BY SWITCHING BOOST TIMING (17824350)
- 1.7 SYSTEMS AND METHODS OF CORRECTING ERRORS IN UNMATCHED MEMORY DEVICES (17827562)
- 1.8 NON-VOLATILE MEMORY WITH ENGINEERED CHANNEL GRADIENT (17828685)
- 1.9 TEMPERATURE DEPENDENT PROGRAMMING TECHNIQUES IN A MEMORY DEVICE (17826434)
- 1.10 SYSTEMS AND METHODS OF REDUCING DETECTION ERROR AND DUTY ERROR IN MEMORY DEVICES (17828708)
- 1.11 THREE-DIMENSIONAL MEMORY DEVICE CONTAINING DUAL-DEPTH DRAIN-SELECT-LEVEL ISOLATION STRUCTURES AND METHODS FOR FORMING THE SAME (17804184)
Patent applications for SanDisk Technologies LLC on November 30th, 2023
CHIP SELECT, COMMAND, AND ADDRESS ENCODING (17828921)
Main Inventor
TIANYU TANG
CROSS-POINT ARRAY REFRESH SCHEME (17824806)
Main Inventor
Michael Nicolas Albert Tran
HIGH SPEED MULTI-LEVEL CELL (MLC) PROGRAMMING IN NON-VOLATILE MEMORY STRUCTURES (17825048)
Main Inventor
Xiang Yang
LOW POWER MULTI-LEVEL CELL (MLC) PROGRAMMING IN NON-VOLATILE MEMORY STRUCTURES (17825193)
Main Inventor
Xiang Yang
NON-VOLATILE MEMORY WITH INTER-DIE CONNECTION (17825337)
Main Inventor
Shiqian Shao
METHOD TO OPTIMIZE FIRST READ VERSUS SECOND READ MARGIN BY SWITCHING BOOST TIMING (17824350)
Main Inventor
Peng Wang
SYSTEMS AND METHODS OF CORRECTING ERRORS IN UNMATCHED MEMORY DEVICES (17827562)
Main Inventor
Venkatesh Prasad RAMACHANDRA
NON-VOLATILE MEMORY WITH ENGINEERED CHANNEL GRADIENT (17828685)
Main Inventor
Jiacen Guo
TEMPERATURE DEPENDENT PROGRAMMING TECHNIQUES IN A MEMORY DEVICE (17826434)
Main Inventor
Sujjatul Islam
SYSTEMS AND METHODS OF REDUCING DETECTION ERROR AND DUTY ERROR IN MEMORY DEVICES (17828708)
Main Inventor
Jang Woo Lee
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING DUAL-DEPTH DRAIN-SELECT-LEVEL ISOLATION STRUCTURES AND METHODS FOR FORMING THE SAME (17804184)
Main Inventor
Akihiro TOBIOKA