Difference between revisions of "TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. patent applications published on November 30th, 2023"
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==Patent applications for TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. on November 30th, 2023== | ==Patent applications for TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. on November 30th, 2023== | ||
− | ===APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE ([[US Patent Application 17824930. APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE simplified abstract|17824930]])=== | + | ===APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE ([[US Patent Application 17824930. APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)|17824930]])=== |
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− | ===METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE ([[US Patent Application 18359900. METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE simplified abstract|18359900]])=== | + | ===METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE ([[US Patent Application 18359900. METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)|18359900]])=== |
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− | ===SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD FOR THE SAME ([[US Patent Application 18359892. SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD FOR THE SAME simplified abstract|18359892]])=== | + | ===SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD FOR THE SAME ([[US Patent Application 18359892. SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD FOR THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)|18359892]])=== |
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− | ===ELECTRONIC CIRCUIT AND METHOD OF ERROR CORRECTION ([[US Patent Application 17827834. ELECTRONIC CIRCUIT AND METHOD OF ERROR CORRECTION simplified abstract|17827834]])=== | + | ===ELECTRONIC CIRCUIT AND METHOD OF ERROR CORRECTION ([[US Patent Application 17827834. ELECTRONIC CIRCUIT AND METHOD OF ERROR CORRECTION simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)|17827834]])=== |
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− | ===EUV PHOTOMASK AND MANUFACTURING METHOD OF THE SAME ([[US Patent Application 18361891. EUV PHOTOMASK AND MANUFACTURING METHOD OF THE SAME simplified abstract|18361891]])=== | + | ===EUV PHOTOMASK AND MANUFACTURING METHOD OF THE SAME ([[US Patent Application 18361891. EUV PHOTOMASK AND MANUFACTURING METHOD OF THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)|18361891]])=== |
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− | ===METHOD AND SYSTEM FOR SCANNING WAFER ([[US Patent Application 18359871. METHOD AND SYSTEM FOR SCANNING WAFER simplified abstract|18359871]])=== | + | ===METHOD AND SYSTEM FOR SCANNING WAFER ([[US Patent Application 18359871. METHOD AND SYSTEM FOR SCANNING WAFER simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)|18359871]])=== |
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− | ===WET PROCESSING SYSTEM AND SYSTEM AND METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE ([[US Patent Application 17824926. WET PROCESSING SYSTEM AND SYSTEM AND METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE simplified abstract|17824926]])=== | + | ===WET PROCESSING SYSTEM AND SYSTEM AND METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE ([[US Patent Application 17824926. WET PROCESSING SYSTEM AND SYSTEM AND METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)|17824926]])=== |
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− | ===METHOD OF FORMING HIGH VOLTAGE TRANSISTOR AND STRUCTURE RESULTING THEREFROM ([[US Patent Application 17824942. METHOD OF FORMING HIGH VOLTAGE TRANSISTOR AND STRUCTURE RESULTING THEREFROM simplified abstract|17824942]])=== | + | ===METHOD OF FORMING HIGH VOLTAGE TRANSISTOR AND STRUCTURE RESULTING THEREFROM ([[US Patent Application 17824942. METHOD OF FORMING HIGH VOLTAGE TRANSISTOR AND STRUCTURE RESULTING THEREFROM simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)|17824942]])=== |
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− | ===SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME ([[US Patent Application 17824936. SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract|17824936]])=== | + | ===SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME ([[US Patent Application 17824936. SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)|17824936]])=== |
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− | ===SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME ([[US Patent Application 18360855. SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME simplified abstract|18360855]])=== | + | ===SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME ([[US Patent Application 18360855. SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)|18360855]])=== |
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− | ===SEMICONDUCTOR STRUCTURE OF BACKSIDE ILLUMINATION CMOS IMAGE SENSOR AND METHOD FOR FORMING THE SAME ([[US Patent Application 17824922. SEMICONDUCTOR STRUCTURE OF BACKSIDE ILLUMINATION CMOS IMAGE SENSOR AND METHOD FOR FORMING THE SAME simplified abstract|17824922]])=== | + | ===SEMICONDUCTOR STRUCTURE OF BACKSIDE ILLUMINATION CMOS IMAGE SENSOR AND METHOD FOR FORMING THE SAME ([[US Patent Application 17824922. SEMICONDUCTOR STRUCTURE OF BACKSIDE ILLUMINATION CMOS IMAGE SENSOR AND METHOD FOR FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)|17824922]])=== |
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− | ===SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME ([[US Patent Application 17824924. SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract|17824924]])=== | + | ===SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME ([[US Patent Application 17824924. SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)|17824924]])=== |
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− | ===MULTILAYER STRUCTURE, CAPACITOR STRUCTURE AND ELECTRONIC DEVICE ([[US Patent Application 17827837. MULTILAYER STRUCTURE, CAPACITOR STRUCTURE AND ELECTRONIC DEVICE simplified abstract|17827837]])=== | + | ===MULTILAYER STRUCTURE, CAPACITOR STRUCTURE AND ELECTRONIC DEVICE ([[US Patent Application 17827837. MULTILAYER STRUCTURE, CAPACITOR STRUCTURE AND ELECTRONIC DEVICE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)|17827837]])=== |
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− | ===HIGH VOLTAGE DEVICE AND METHOD FOR FORMING THE SAME ([[US Patent Application 17827824. HIGH VOLTAGE DEVICE AND METHOD FOR FORMING THE SAME simplified abstract|17827824]])=== | + | ===HIGH VOLTAGE DEVICE AND METHOD FOR FORMING THE SAME ([[US Patent Application 17827824. HIGH VOLTAGE DEVICE AND METHOD FOR FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)|17827824]])=== |
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− | ===SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF ([[US Patent Application 18232533. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract|18232533]])=== | + | ===SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF ([[US Patent Application 18232533. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)|18232533]])=== |
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− | ===SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD FOR THE SEMICONDUCTOR STRUCTURE ([[US Patent Application 18360804. SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD FOR THE SEMICONDUCTOR STRUCTURE simplified abstract|18360804]])=== | + | ===SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD FOR THE SEMICONDUCTOR STRUCTURE ([[US Patent Application 18360804. SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD FOR THE SEMICONDUCTOR STRUCTURE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)|18360804]])=== |
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− | ===METHOD FOR MANUFACTURING INTEGRATED CIRCUIT DEVICE AND INTEGRATED CIRCUIT DEVICE THEREOF ([[US Patent Application 17824923. METHOD FOR MANUFACTURING INTEGRATED CIRCUIT DEVICE AND INTEGRATED CIRCUIT DEVICE THEREOF simplified abstract|17824923]])=== | + | ===METHOD FOR MANUFACTURING INTEGRATED CIRCUIT DEVICE AND INTEGRATED CIRCUIT DEVICE THEREOF ([[US Patent Application 17824923. METHOD FOR MANUFACTURING INTEGRATED CIRCUIT DEVICE AND INTEGRATED CIRCUIT DEVICE THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)|17824923]])=== |
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− | ===CIRCUIT AND METHOD TO ENHANCE EFFICIENCY OF SEMICONDUCTOR DEVICE ([[US Patent Application 18360849. CIRCUIT AND METHOD TO ENHANCE EFFICIENCY OF SEMICONDUCTOR DEVICE simplified abstract|18360849]])=== | + | ===CIRCUIT AND METHOD TO ENHANCE EFFICIENCY OF SEMICONDUCTOR DEVICE ([[US Patent Application 18360849. CIRCUIT AND METHOD TO ENHANCE EFFICIENCY OF SEMICONDUCTOR DEVICE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)|18360849]])=== |
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− | ===MEMORY DEVICE WITH BACK-GATE TRANSISTOR AND METHOD OF FORMING THE SAME ([[US Patent Application 17829324. MEMORY DEVICE WITH BACK-GATE TRANSISTOR AND METHOD OF FORMING THE SAME simplified abstract|17829324]])=== | + | ===MEMORY DEVICE WITH BACK-GATE TRANSISTOR AND METHOD OF FORMING THE SAME ([[US Patent Application 17829324. MEMORY DEVICE WITH BACK-GATE TRANSISTOR AND METHOD OF FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)|17829324]])=== |
Revision as of 07:03, 5 December 2023
Contents
- 1 Patent applications for TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. on November 30th, 2023
- 1.1 APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE (17824930)
- 1.2 METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE (18359900)
- 1.3 SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD FOR THE SAME (18359892)
- 1.4 ELECTRONIC CIRCUIT AND METHOD OF ERROR CORRECTION (17827834)
- 1.5 EUV PHOTOMASK AND MANUFACTURING METHOD OF THE SAME (18361891)
- 1.6 METHOD AND SYSTEM FOR SCANNING WAFER (18359871)
- 1.7 WET PROCESSING SYSTEM AND SYSTEM AND METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE (17824926)
- 1.8 METHOD OF FORMING HIGH VOLTAGE TRANSISTOR AND STRUCTURE RESULTING THEREFROM (17824942)
- 1.9 SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME (17824936)
- 1.10 SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME (18360855)
- 1.11 SEMICONDUCTOR STRUCTURE OF BACKSIDE ILLUMINATION CMOS IMAGE SENSOR AND METHOD FOR FORMING THE SAME (17824922)
- 1.12 SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME (17824924)
- 1.13 MULTILAYER STRUCTURE, CAPACITOR STRUCTURE AND ELECTRONIC DEVICE (17827837)
- 1.14 HIGH VOLTAGE DEVICE AND METHOD FOR FORMING THE SAME (17827824)
- 1.15 SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF (18232533)
- 1.16 SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD FOR THE SEMICONDUCTOR STRUCTURE (18360804)
- 1.17 METHOD FOR MANUFACTURING INTEGRATED CIRCUIT DEVICE AND INTEGRATED CIRCUIT DEVICE THEREOF (17824923)
- 1.18 CIRCUIT AND METHOD TO ENHANCE EFFICIENCY OF SEMICONDUCTOR DEVICE (18360849)
- 1.19 MEMORY DEVICE WITH BACK-GATE TRANSISTOR AND METHOD OF FORMING THE SAME (17829324)
Patent applications for TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. on November 30th, 2023
APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE (17824930)
Main Inventor
CHUN-HSI HUANG
METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE (18359900)
Main Inventor
YI-CHUAN TENG
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD FOR THE SAME (18359892)
Main Inventor
CHING-KAI SHEN
ELECTRONIC CIRCUIT AND METHOD OF ERROR CORRECTION (17827834)
Main Inventor
CHIA-CHUN LIAO
EUV PHOTOMASK AND MANUFACTURING METHOD OF THE SAME (18361891)
Main Inventor
FENG YUAN HSU
METHOD AND SYSTEM FOR SCANNING WAFER (18359871)
Main Inventor
PEI-HSUAN LEE
WET PROCESSING SYSTEM AND SYSTEM AND METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE (17824926)
Main Inventor
YING-CHIEH MENG
METHOD OF FORMING HIGH VOLTAGE TRANSISTOR AND STRUCTURE RESULTING THEREFROM (17824942)
Main Inventor
YUAN-CHENG YANG
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME (17824936)
Main Inventor
JHU-MIN SONG
SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME (18360855)
Main Inventor
WEI-LUN CHEN
SEMICONDUCTOR STRUCTURE OF BACKSIDE ILLUMINATION CMOS IMAGE SENSOR AND METHOD FOR FORMING THE SAME (17824922)
Main Inventor
CHING-HUNG KAO
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME (17824924)
Main Inventor
JUI-LIN CHU
MULTILAYER STRUCTURE, CAPACITOR STRUCTURE AND ELECTRONIC DEVICE (17827837)
Main Inventor
HAI-DANG TRINH
HIGH VOLTAGE DEVICE AND METHOD FOR FORMING THE SAME (17827824)
Main Inventor
YU-YING LAI
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF (18232533)
Main Inventor
Ya-Yi Tsai
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD FOR THE SEMICONDUCTOR STRUCTURE (18360804)
Main Inventor
CHUN-YEN PENG
METHOD FOR MANUFACTURING INTEGRATED CIRCUIT DEVICE AND INTEGRATED CIRCUIT DEVICE THEREOF (17824923)
Main Inventor
WEI-KANG LIU
CIRCUIT AND METHOD TO ENHANCE EFFICIENCY OF SEMICONDUCTOR DEVICE (18360849)
Main Inventor
BEI-SHING LIEN
MEMORY DEVICE WITH BACK-GATE TRANSISTOR AND METHOD OF FORMING THE SAME (17829324)
Main Inventor
MENG-HAN LIN