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The following pages link to Category:Intel Corporation:

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• 18091270. IC DIE PACKAGES WITH LOW CTE DIELECTRIC MATERIALS simplified abstract (Intel Corporation) ‎ (← links)
• 18091034. PATTERNED SHEET MUF FOR COMPLEX PACKAGES AND METHODS OF PRODUCING simplified abstract (Intel Corporation) ‎ (← links)
• 18090883. PACKAGE ARCHITECTURES WITH HETEROGENEOUS INTEGRATION OF VARIOUS DEVICE THICKNESSES simplified abstract (Intel Corporation) ‎ (← links)
• 18089931. DEVICES IN A SILICON CARBIDE LAYER COUPLED WITH DEVICES IN A GALLIUM NITRIDE LAYER simplified abstract (Intel Corporation) ‎ (← links)
• 18091543. APPARATUS AND METHOD FOR ATTACHING AN OPTICAL COMPONENT USING NO REMELT METALLURGY simplified abstract (Intel Corporation) ‎ (← links)
• 18091555. APPARATUS AND METHOD FOR ATTACHING AN OPTICAL COMPONENT USING HYBRID BONDING simplified abstract (Intel Corporation) ‎ (← links)
• 18147457. ARCHITECTURES AND METHODS FOR METAL LAMINATION ON A GLASS LAYER simplified abstract (Intel Corporation) ‎ (← links)
• 18148355. INTEGRATED CIRCUIT DEVICE PACKAGE SUBSTRATES WITH GLASS CORE LAYER HAVING ROUGHENED SURFACES simplified abstract (Intel Corporation) ‎ (← links)
• 18089801. GLASS SUBSTRATE DEVICE WITH PLATED THROUGH HOLES simplified abstract (Intel Corporation) ‎ (← links)
• 18092012. GLASS SUBSTRATES WITH SELF-ASSEMBLED MONOLAYERS FOR COPPER ADHESION simplified abstract (Intel Corporation) ‎ (← links)
• 18147535. METHODS, SYSTEMS, APPARATUS, AND ARTICLES OF MANUFACTURE TO PRODUCE INTEGRATED CIRCUIT PACKAGES HAVING SILICON NITRIDE ADHESION PROMOTERS simplified abstract (Intel Corporation) ‎ (← links)
• 18148147. VIA FUSE WITH METAL-INSULATOR-METAL ARCHITECTURE AND IMPROVED ELECTRODE MATERIAL simplified abstract (Intel Corporation) ‎ (← links)
• 18090828. INTEGRATED CIRCUIT STRUCTURES HAVING ROUTING ACROSS LAYERS OF CHANNEL STRUCTURES simplified abstract (Intel Corporation) ‎ (← links)
• 18090838. DOUBLE INTERCONNECTS FOR STITCHED DIES simplified abstract (Intel Corporation) ‎ (← links)
• 18147820. HYBRID INTEGRATION OF BACK-END-OF-LINE LAYERS FOR DISAGGREGATED TECHNOLOGIES simplified abstract (Intel Corporation) ‎ (← links)
• 18089877. INTEGRATED CIRCUIT STRUCTURES HAVING LOOKUP TABLE DECODERS FOR FPGAS simplified abstract (Intel Corporation) ‎ (← links)
• 18091560. TECHNOLOGIES FOR VERTICALLY INTERCONNECTED GLASS CORE ARCHITECTURE simplified abstract (Intel Corporation) ‎ (← links)
• 18091150. ZERO MISALIGNED PAD AND VIA METALLIZATION STRUCTURES IN GLASS PACKAGE SUBSTRATES simplified abstract (Intel Corporation) ‎ (← links)
• 18147487. METHODS AND APPARATUS TO PREVENT OVER-ETCH IN SEMICONDUCTOR PACKAGES simplified abstract (Intel Corporation) ‎ (← links)
• 18091014. HYBRID BONDED DIE-LAST INTERCONNECT ARCHITECTURES simplified abstract (Intel Corporation) ‎ (← links)
• 18090140. SOCKET INTERFACE FRAMES FOR DEVICES WITH IMPROVED-PERFORMANCE SUBSTRATES simplified abstract (Intel Corporation) ‎ (← links)
• 18091616. TECHNOLOGIES FOR PACKAGE SUBSTRATES WITH ASYMMETRIC PLATING simplified abstract (Intel Corporation) ‎ (← links)
• 18148598. STACKED INORGANIC-ORGANIC DIELECTRICS FOR THIN FILM CAPACITORS IN PACKAGE SUBSTRATES simplified abstract (Intel Corporation) ‎ (← links)
• 18091583. TECHNOLOGIES FOR DIE RECYCLING FOR HIGH YIELD PACKAGING simplified abstract (Intel Corporation) ‎ (← links)
• 18147497. METHODS AND APPARATUS FOR OPTICAL THERMAL TREATMENT IN SEMICONDUCTOR PACKAGES simplified abstract (Intel Corporation) ‎ (← links)
• 18148148. METHODS AND APPARATUS TO REDUCE SOLDER BUMP BRIDGING BETWEEN TWO SUBSTRATES simplified abstract (Intel Corporation) ‎ (← links)
• 18091265. DIRECTLY BONDED MULTICHIP IC DEVICE PACKAGES simplified abstract (Intel Corporation) ‎ (← links)
• 18148533. PACKAGE ARCHITECTURE WITH MEMORY CHIPS HAVING DIFFERENT PROCESS REGIONS simplified abstract (Intel Corporation) ‎ (← links)
• 18148528. PACKAGE ARCHITECTURE WITH MEMORY CHIPS HAVING DIFFERENT PROCESS REGIONS simplified abstract (Intel Corporation) ‎ (← links)
• 18148543. PACKAGE ARCHITECTURE WITH MEMORY CHIPS HAVING DIFFERENT PROCESS REGIONS simplified abstract (Intel Corporation) ‎ (← links)
• 18090707. DIE ATTACH IN GLASS CORE PACKAGE THROUGH ORGANIC-TO-ORGANIC BONDING simplified abstract (Intel Corporation) ‎ (← links)
• 18091228. ARCHITECTURES FOR MEMORY ON INTEGRATED CIRCUIT DEVICE PACKAGES simplified abstract (Intel Corporation) ‎ (← links)
• 18148338. MODULAR MEMORY BLOCKS FOR INTEGRATED CIRCUIT DEVICES simplified abstract (Intel Corporation) ‎ (← links)
• 18610104. OFFSET INTERPOSERS FOR LARGE-BOTTOM PACKAGES AND LARGE-DIE PACKAGE-ON- PACKAGE STRUCTURES simplified abstract (Intel Corporation) ‎ (← links)
• 18089908. INTEGRATED CIRCUIT STRUCTURES HAVING STACKED ELECTROSTATIC DISCHARGE (ESD) FOR BACKSIDE POWER DELIVERY simplified abstract (Intel Corporation) ‎ (← links)
• 18091714. TECHNOLOGIES FOR RIBBON FIELD EFFECT TRANSISTORS WITH VARIABLE FIN CHANNEL DIMENSIONS simplified abstract (Intel Corporation) ‎ (← links)
• 18091206. SEEDED GROWTH FOR 2D NANORIBBON TRANSISTORS simplified abstract (Intel Corporation) ‎ (← links)
• 18089936. COUPLING A LAYER OF SILICON CARBIDE WITH AN ADJACENT LAYER simplified abstract (Intel Corporation) ‎ (← links)
• 18089945. TRANSISTOR INCLUDING WIDE BAND GAP MATERIALS simplified abstract (Intel Corporation) ‎ (← links)
• 18089919. TRANSISTOR WITH A BODY AND BACK GATE STRUCTURE IN DIFFERENT MATERIAL LAYERS simplified abstract (Intel Corporation) ‎ (← links)
• 18091197. SELECTIVE GATE OXIDE FORMATION ON 2D MATERIAL BASED TRANSISTOR DEVICES simplified abstract (Intel Corporation) ‎ (← links)
• 18090048. GATE CUT, AND SOURCE AND DRAIN CONTACTS simplified abstract (Intel Corporation) ‎ (← links)
• 18091201. BEOL CONTACT METALS FOR 2D TRANSISTORS simplified abstract (Intel Corporation) ‎ (← links)
• 18089966. TRANSISTOR IN A SILICON CARBIDE LAYER AND A TRANSISTOR IN A GALLIUM NITRIDE LAYER IN A CASCODE DESIGN simplified abstract (Intel Corporation) ‎ (← links)
• 18148617. TECHNOLOGIES FOR HIGH-PERFORMANCE MAGNETOELECTRIC SPIN-ORBIT LOGIC simplified abstract (Intel Corporation) ‎ (← links)
• 18091192. TRANSISTOR STRUCTURES HAVING A DOPING LAYER ON TRANSITION METAL DICHALCOGENIDE LAYERS OUTSIDE OF THE CHANNEL REGION simplified abstract (Intel Corporation) ‎ (← links)
• 18091211. 2D NANORIBBONS UTILIZING SILICON SCAFFOLDING simplified abstract (Intel Corporation) ‎ (← links)
• 18092152. TRANSISTOR WITH CHANNEL MATERIAL IN A STACK WITH INSULATOR MATERIAL SUPPORTS simplified abstract (Intel Corporation) ‎ (← links)
• 18091209. TRANSFER-FREE 2D FET AND FEFET DEVICE FABRICATION BY 2D MATERIAL GROWTH IN SUPERLATTICE WITH NITRIDES simplified abstract (Intel Corporation) ‎ (← links)
• 18148871. FIELD EFFECT TRANSISTOR COMPRISING TRANSITION METAL DICHALCOGENIDE (TMD) AND FERROELECTRIC MATERIAL simplified abstract (Intel Corporation) ‎ (← links)

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