Information for "18405418. METHOD FOR PRODUCING A VERTICAL SEMICONDUCTOR DEVICE WITH EPITAXIALLY GROWN III-V EPITAXY USING THE SUBSTRATE SEVERAL TIMES, AND CORRESPONDING SEMICONDUCTOR DEVICE, IN PARTICULAR BASED ON GALLIUM NITRIDE simplified abstract (Robert Bosch GmbH)"
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Display title | 18405418. METHOD FOR PRODUCING A VERTICAL SEMICONDUCTOR DEVICE WITH EPITAXIALLY GROWN III-V EPITAXY USING THE SUBSTRATE SEVERAL TIMES, AND CORRESPONDING SEMICONDUCTOR DEVICE, IN PARTICULAR BASED ON GALLIUM NITRIDE simplified abstract (Robert Bosch GmbH) |
Default sort key | 18405418. METHOD FOR PRODUCING A VERTICAL SEMICONDUCTOR DEVICE WITH EPITAXIALLY GROWN III-V EPITAXY USING THE SUBSTRATE SEVERAL TIMES, AND CORRESPONDING SEMICONDUCTOR DEVICE, IN PARTICULAR BASED ON GALLIUM NITRIDE simplified abstract (Robert Bosch GmbH) |
Page length (in bytes) | 4,598 |
Page ID | 82560 |
Page content language | en - English |
Page content model | wikitext |
Indexing by robots | Allowed |
Number of redirects to this page | 0 |
Counted as a content page | Yes |
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Page creator | Wikipatents (talk | contribs) |
Date of page creation | 05:16, 12 July 2024 |
Latest editor | Wikipatents (talk | contribs) |
Date of latest edit | 05:16, 12 July 2024 |
Total number of edits | 1 |
Recent number of edits (within past 90 days) | 0 |
Recent number of distinct authors | 0 |