View source for VERTICAL SEMICONDUCTOR DEVICE: abstract simplified (18166854)

*This abstract for appeared for patent application  number 18166854 Titled 'VERTICAL SEMICONDUCTOR DEVICE'

==Simplified Explanation==

The abstract describes a vertical semiconductor device that consists of a substrate, a pattern structure, and a channel structure. The pattern structure is made up of insulation patterns and gate structures stacked vertically on the substrate. The channel structure extends vertically and includes a data storage structure, a channel, a lower pattern, and a filling insulation pattern. The channel has a cylindrical shape and the lower pattern contains silicon and germanium.


==Original Abstract Submitted==

A vertical semiconductor device may include a substrate, a pattern structure on the substrate, and a channel structure in a channel hole passing through the pattern structure. The pattern structure may include insulation patterns and gate structures alternately stacked in a vertical direction perpendicular to an upper surface of the substrate. The channel structure may extend in the vertical direction. The channel structure may include a data storage structure on an inner surface of the channel hole, a channel contacting the data storage structure, a lower pattern on the channel positioned at a lower portion of the channel hole, and a filling insulation pattern on the channel and the lower pattern. The channel may have a cylindrical shape. The lower pattern may include an oxide including silicon and germanium.