View source for US Patent Application 18447964. METHOD OF GENERATING NETLIST INCLUDING PROXIMITY-EFFECT-INDUCER (PEI) PARAMETERS simplified abstract

=METHOD OF GENERATING NETLIST INCLUDING PROXIMITY-EFFECT-INDUCER (PEI) PARAMETERS=


==Organization Name==

[[Taiwan Semiconductor Manufacturing Company, Ltd.]]


==Inventor(s)==

[[Yen-Pin Chen of Hsinchu (TW)]]

[[Florentin Dartu of Hsinchu (TW)]]

[[Wei-Chih Hsieh of Hsinchu (TW)]]

[[Tzu-Hen Lin of Hsinchu (TW)]]

[[Chung-Hsing Wang of Hsinchu (TW)]]

==METHOD OF GENERATING NETLIST INCLUDING PROXIMITY-EFFECT-INDUCER (PEI) PARAMETERS - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18447964 titled 'METHOD OF GENERATING NETLIST INCLUDING PROXIMITY-EFFECT-INDUCER (PEI) PARAMETERS

==Simplified Explanation==

The abstract describes a method for manufacturing a semiconductor device, where a layout diagram is stored on a computer-readable medium. The layout diagram includes a subset of cells called transistor-to-well-edge-influenced (TWEI) cells, which contain transistors in corresponding wells.

* The method involves generating a netlist that represents the subset of TWEI cells.
* The netlist is expanded to include proximity-effect-inducer (PEI) parameters for each TWEI cell.
* PEI parameters are related to the physical proximity of a transistor within a cell to the edge of its corresponding well.

Overall, the innovation in this patent application is a method for incorporating PEI parameters into the netlist generation process for TWEI cells in semiconductor device manufacturing. This allows for better modeling and analysis of the effects of physical proximity on transistor performance.


==Original Abstract Submitted==

A method (of manufacturing a semiconductor device, a corresponding layout diagram being stored on a non-transitory computer-readable medium, the layout diagram including a subset of transistor-to-well-edge-influenced (TWEI) cells, each TWEI cell including one or more transistors in one or more corresponding wells) includes generating a netlist which represents the subset, the generating a netlist including: In some embodiments, for each TWEI cell represented in the netlist, and for a given transistor in a given well in a given cell, expanding the netlist to include one or more proximity-effect-inducer (PEI) parameters, each PEI parameter being related to an intra-cell physical proximity of the given transistor to an edge of the given well (given well-edge).



[[Category:G06F30/392]]
[[Category:G06F30/327]]
[[Category:G06F30/398]]