View source for US Patent Application 18366725. RAISED SOURCE/DRAIN OXIDE SEMICONDUCTING THIN FILM TRANSISTOR AND METHODS OF MAKING THE SAME simplified abstract

=RAISED SOURCE/DRAIN OXIDE SEMICONDUCTING THIN FILM TRANSISTOR AND METHODS OF MAKING THE SAME=


==Organization Name==

[[:Category:Taiwan Semiconductor Manufacturing Company Limited|Taiwan Semiconductor Manufacturing Company Limited]]


[[Category:Taiwan Semiconductor Manufacturing Company Limited]]

==Inventor(s)==

[[:Category:Gerben Doornbos of Kessel-Lo (BE)|Gerben Doornbos of Kessel-Lo (BE)]][[Category:Gerben Doornbos of Kessel-Lo (BE)]]

[[:Category:Blandine Duriez of Bruxelles (BE)|Blandine Duriez of Bruxelles (BE)]][[Category:Blandine Duriez of Bruxelles (BE)]]

[[:Category:Marcus Johannes Henricus Van Dal of Linden (BE)|Marcus Johannes Henricus Van Dal of Linden (BE)]][[Category:Marcus Johannes Henricus Van Dal of Linden (BE)]]

==RAISED SOURCE/DRAIN OXIDE SEMICONDUCTING THIN FILM TRANSISTOR AND METHODS OF MAKING THE SAME - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18366725 titled 'RAISED SOURCE/DRAIN OXIDE SEMICONDUCTING THIN FILM TRANSISTOR AND METHODS OF MAKING THE SAME

==Simplified Explanation==

The patent application describes a transistor and methods of making it.
* The transistor has a patterned gate electrode, a dielectric layer, and a patterned first oxide semiconductor layer.
* The first oxide semiconductor layer includes a channel region and source/drain regions.
* The source/drain regions are thicker than the channel region.
* Contacts are located on the first oxide semiconductor layer and connected to the source/drain regions.


==Original Abstract Submitted==

A transistor, integrated semiconductor device and methods of making are disclosed. The transistor includes a patterned gate electrode, a dielectric layer located over the patterned gate electrode and a patterned first oxide semiconductor layer comprising a channel region and source/drain regions located on sides of the channel region. The thickness of the source/drain regions is greater than a thickness of the channel region. The transistor also includes contacts located on the patterned first oxide semiconductor layer and connected to the source/drain regions of the patterned first oxide semiconductor layer.



[[Category:H01L29/786]]
[[Category:H01L29/66]]