View source for US Patent Application 18366210. SOURCE/DRAIN SPACER WITH AIR GAP IN SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME simplified abstract

=SOURCE/DRAIN SPACER WITH AIR GAP IN SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME=


==Organization Name==

[[:Category:Taiwan Semiconductor Manufacturing Company, Ltd.|Taiwan Semiconductor Manufacturing Company, Ltd.]]


[[Category:Taiwan Semiconductor Manufacturing Company, Ltd.]]==Inventor(s)==

[[Category:[[:Category:Ko-Cheng Liu of Hsinchu City (TW)|Ko-Cheng Liu of Hsinchu City (TW)]]]]

[[Category:[[:Category:Ming-Lung Cheng of Kaohsiung County (TW)|Ming-Lung Cheng of Kaohsiung County (TW)]]]]

[[Category:[[:Category:Chang-Miao Liu of Hsinchu City (TW)|Chang-Miao Liu of Hsinchu City (TW)]]]]

==SOURCE/DRAIN SPACER WITH AIR GAP IN SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18366210 titled 'SOURCE/DRAIN SPACER WITH AIR GAP IN SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME

==Simplified Explanation==

The patent application describes a semiconductor structure that includes several components and features. Here is a simplified explanation of the abstract:

* The semiconductor structure consists of a semiconductor fin that sticks out from a substrate.
* Adjacent and parallel to the semiconductor fin, there is a dielectric fin.
* Inside the semiconductor fin, there is an epitaxial source/drain (S/D) feature.
* A dielectric layer is placed between the sidewall of the epitaxial S/D feature and the sidewall of the dielectric fin.
* Within the dielectric layer, there is an air gap.

Bullet points explaining the patent/innovation:

* The semiconductor structure has a protruding semiconductor fin, which allows for better performance and efficiency.
* The presence of the dielectric fin alongside the semiconductor fin helps in reducing interference and improving overall functionality.
* The epitaxial S/D feature within the semiconductor fin enhances the performance of the semiconductor structure.
* The dielectric layer between the epitaxial S/D feature and the dielectric fin provides insulation and protection.
* The air gap within the dielectric layer further enhances the performance and efficiency of the semiconductor structure.


==Original Abstract Submitted==

A semiconductor structure includes a semiconductor fin protruding from a substrate, a dielectric fin disposed adjacent and substantially parallel to the semiconductor fin, an epitaxial source/drain (S/D) feature disposed in the semiconductor fin, a dielectric layer disposed between a sidewall of the epitaxial S/D feature and a sidewall of the dielectric fin, and an air gap disposed in the dielectric layer.



[[Category:H01L29/06]]
[[Category:H01L29/78]]
[[Category:H01L21/8234]]
[[Category:H01L29/66]]