View source for US Patent Application 18355218. SEMICONDUCTOR FILM AND METHOD OF PRODUCING THE SAME, PHOTOELECTRIC CONVERSION ELEMENT, SOLID-STATE IMAGING ELEMENT AND ELECTRONIC APPARATUS simplified abstract

=SEMICONDUCTOR FILM AND METHOD OF PRODUCING THE SAME, PHOTOELECTRIC CONVERSION ELEMENT, SOLID-STATE IMAGING ELEMENT AND ELECTRONIC APPARATUS=


==Organization Name==

[[Sony Group Corporation]]


==Inventor(s)==

[[Syuuiti Takizawa of Tokyo (JP)]]

[[Michinori Shiomi of Kanagawa (JP)]]

==SEMICONDUCTOR FILM AND METHOD OF PRODUCING THE SAME, PHOTOELECTRIC CONVERSION ELEMENT, SOLID-STATE IMAGING ELEMENT AND ELECTRONIC APPARATUS - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18355218 titled 'SEMICONDUCTOR FILM AND METHOD OF PRODUCING THE SAME, PHOTOELECTRIC CONVERSION ELEMENT, SOLID-STATE IMAGING ELEMENT AND ELECTRONIC APPARATUS

==Simplified Explanation==

The patent application describes a semiconductor film that aims to improve the efficiency of converting light into electricity. 

* The film consists of semiconductor nanoparticles and a specific compound.
* The compound is represented by a general formula (1) and is coordinated with the semiconductor nanoparticles.
* The purpose of the compound is to enhance the photoelectric conversion efficiency of the semiconductor film.
* The invention seeks to provide a solution for achieving higher photoelectric conversion efficiency in semiconductor films.


==Original Abstract Submitted==

To provide a semiconductor film capable of realizing further enhancement of photoelectric conversion efficiency. The semiconductor film includes semiconductor nanoparticles and a compound represented by the following general formula (1), in which the compound represented by the general formula (1) is coordinated to the semiconductor nanoparticles.