View source for US Patent Application 18335168. INTEGRATED CHIP WITH A GATE STRUCTURE DISPOSED WITHIN A TRENCH simplified abstract

=INTEGRATED CHIP WITH A GATE STRUCTURE DISPOSED WITHIN A TRENCH=


==Organization Name==

[[Taiwan Semiconductor Manufacturing Company, Ltd.]]


==Inventor(s)==

[[Yong-Sheng Huang of Taipei City (TW)]]


[[Ming Chyi Liu of Hsinchu City (TW)]]


==INTEGRATED CHIP WITH A GATE STRUCTURE DISPOSED WITHIN A TRENCH - A simplified explanation of the abstract==


*This abstract for appeared for US patent application  number 18335168 Titled 'INTEGRATED CHIP WITH A GATE STRUCTURE DISPOSED WITHIN A TRENCH'

==Simplified Explanation==

The abstract describes an integrated chip that includes a substrate with a trench on its front-side surface. The trench is filled with a gate structure that extends along the sidewalls of the trench and reaches the upper surface of the substrate. The chip also has two source/drain regions located on the front-side surface of the substrate, with the gate structure positioned between them. The bottom surface of the gate structure is below the bottom surface of the first source/drain region.


==Original Abstract Submitted==

The present disclosure relates to an integrated chip comprising a substrate having a first pair of opposing sidewalls that define a trench. The trench extends into a front-side surface of the substrate. A first source/drain region is disposed along the front-side surface of the substrate. A second source/drain region is disposed along the front-side surface of the substrate. A gate structure is disposed within the trench and is arranged laterally between the first source/drain region and the second source/drain region. The gate structure fills the trench and extends along the first pair of opposing sidewalls to an upper surface of the substrate. A bottom surface of the gate structure is disposed below a bottom surface of the first source/drain region.