View source for US Patent Application 18201509. THIN FILM TRANSISTOR SUBSTRATE, METHOD FOR MANUFACTURING THEREOF, AND DISPLAY APPARATUS COMPRISING THE THIN FILM TRANSISTOR SUBSTRATE simplified abstract

=THIN FILM TRANSISTOR SUBSTRATE, METHOD FOR MANUFACTURING THEREOF, AND DISPLAY APPARATUS COMPRISING THE THIN FILM TRANSISTOR SUBSTRATE=


==Organization Name==

[[:Category:LG DISPLAY CO., LTD.|LG DISPLAY CO., LTD.]]


[[Category:LG DISPLAY CO., LTD.]]

==Inventor(s)==

[[:Category:JaeHyun Kim of Gyeonggi-do (KR)|JaeHyun Kim of Gyeonggi-do (KR)]][[Category:JaeHyun Kim of Gyeonggi-do (KR)]]

==THIN FILM TRANSISTOR SUBSTRATE, METHOD FOR MANUFACTURING THEREOF, AND DISPLAY APPARATUS COMPRISING THE THIN FILM TRANSISTOR SUBSTRATE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18201509 titled 'THIN FILM TRANSISTOR SUBSTRATE, METHOD FOR MANUFACTURING THEREOF, AND DISPLAY APPARATUS COMPRISING THE THIN FILM TRANSISTOR SUBSTRATE

==Simplified Explanation==

The patent application describes a thin film transistor substrate with two thin film transistors on a base substrate.
* The first thin film transistor has a first active layer with a channel part that overlaps with a first gate electrode and a first conductive part penetration region.
* The second thin film transistor has a second active layer with a channel part that overlaps with a second gate electrode and a second conductive part penetration region.
* The length of the first conductive part penetration region is longer than the second conductive part penetration region.


==Original Abstract Submitted==

A thin film transistor substrate includes a first thin film transistor and a second thin film transistor on the base substrate, the first active layer of the first thin film transistor includes a first channel part overlapping with a first gate electrode and a first conductive part penetration region, the second active layer of the second thin film transistor includes the second channel part overlapping with a second gate electrode, a second conductive part penetration region, and a length of the first conductive part penetration region is longer than the second conductive part penetration region.



[[Category:H10K59/121]]
[[Category:H10K59/12]]