View source for US Patent Application 18193058. NANOCRYSTALLINE BORON NITRIDE FILM, IMAGE SENSOR INCLUDING THE SAME, FIELD EFFECT TRANSISTOR INCLUDING THE SAME, AND METHOD OF FABRICATING THE NANOCRYSTALLINE BORON NITRIDE FILM simplified abstract

=NANOCRYSTALLINE BORON NITRIDE FILM, IMAGE SENSOR INCLUDING THE SAME, FIELD EFFECT TRANSISTOR INCLUDING THE SAME, AND METHOD OF FABRICATING THE NANOCRYSTALLINE BORON NITRIDE FILM=


==Organization Name==

[[Samsung Electronics Co., Ltd.]]


==Inventor(s)==

[[Taejin Choi of Suwon-si (KR)]]


[[Minsu Kim of Ulsan (KR)]]


[[Hyeonsuk Shin of Ulsan (KR)]]


[[Hyeonjin Shin of Suwon-si (KR)]]


==NANOCRYSTALLINE BORON NITRIDE FILM, IMAGE SENSOR INCLUDING THE SAME, FIELD EFFECT TRANSISTOR INCLUDING THE SAME, AND METHOD OF FABRICATING THE NANOCRYSTALLINE BORON NITRIDE FILM - A simplified explanation of the abstract==


*This abstract for appeared for US patent application  number 18193058 Titled 'NANOCRYSTALLINE BORON NITRIDE FILM, IMAGE SENSOR INCLUDING THE SAME, FIELD EFFECT TRANSISTOR INCLUDING THE SAME, AND METHOD OF FABRICATING THE NANOCRYSTALLINE BORON NITRIDE FILM'

==Simplified Explanation==

The abstract describes a type of film made from nanocrystalline boron nitride. This film has a low dielectric constant, meaning it does not conduct electricity well, and it also has strong mechanical properties. The film is made up of a specific compound called crystalline boron nitride. At an operating frequency of 100 kHz, the film's dielectric constant falls within the range of 2.5 to 5.5.


==Original Abstract Submitted==

Disclosed is a nanocrystalline boron nitride film having a relatively low dielectric constant and excellent mechanical properties. The nanocrystalline boron nitride film includes a crystalline boron nitride compound, and has a dielectric constant within a range of 2.5 to 5.5 at a 100 kHz operating frequency.