View source for US Patent Application 18008389. LIGHT-EMITTING DEVICE, MANUFACTURING METHOD THEREFOR, AND DISPLAY APPARATUS simplified abstract

=LIGHT-EMITTING DEVICE, MANUFACTURING METHOD THEREFOR, AND DISPLAY APPARATUS=


==Organization Name==

[[:Category:Samsung Display Co., LTD.|Samsung Display Co., LTD.]]


[[Category:Samsung Display Co., LTD.]]

==Inventor(s)==

[[:Category:Hyung Rae Cha of Seoul (KR)|Hyung Rae Cha of Seoul (KR)]][[Category:Hyung Rae Cha of Seoul (KR)]]

[[:Category:Dong Uk Kim of Hwaseong-si (KR)|Dong Uk Kim of Hwaseong-si (KR)]][[Category:Dong Uk Kim of Hwaseong-si (KR)]]

[[:Category:Se Young Kim of Gwangju (KR)|Se Young Kim of Gwangju (KR)]][[Category:Se Young Kim of Gwangju (KR)]]

==LIGHT-EMITTING DEVICE, MANUFACTURING METHOD THEREFOR, AND DISPLAY APPARATUS - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18008389 titled 'LIGHT-EMITTING DEVICE, MANUFACTURING METHOD THEREFOR, AND DISPLAY APPARATUS

==Simplified Explanation==

The patent application describes a light-emitting device that consists of a light-emitting device core, an electrode layer, and an insulating film. 

* The light-emitting device core is made up of a first semiconductor layer, a second semiconductor layer, and an active layer in between.
* The electrode layer is located on top of the second semiconductor layer of the light-emitting device core.
* An insulating film surrounds the side surface of the light-emitting device core.
* The side surface of the electrode layer extends outward from the side surface of the second semiconductor layer.


==Original Abstract Submitted==

A light-emitting device includes: a light-emitting device core including a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer; an electrode layer on the second semiconductor layer of the light-emitting device core, and an insulating film around a side surface of the light-emitting device core, wherein a side surface of the electrode layer protrudes outward from a side surface of the second semiconductor layer.



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