View source for US Patent Application 17826223. REDISTRIBUTION STRUCTURE WITH COPPER BUMPS ON PLANAR METAL INTERCONNECTS AND METHODS OF FORMING THE SAME simplified abstract

=REDISTRIBUTION STRUCTURE WITH COPPER BUMPS ON PLANAR METAL INTERCONNECTS AND METHODS OF FORMING THE SAME=


==Organization Name==

[[:Category:Taiwan Semiconductor Manufacturing Company Limited|Taiwan Semiconductor Manufacturing Company Limited]]


[[Category:Taiwan Semiconductor Manufacturing Company Limited]]

==Inventor(s)==

[[:Category:Hsien-Wei Chen of Hsinchu City (TW)|Hsien-Wei Chen of Hsinchu City (TW)]][[Category:Hsien-Wei Chen of Hsinchu City (TW)]]

[[:Category:Meng-Liang Lin of Hsinchu (TW)|Meng-Liang Lin of Hsinchu (TW)]][[Category:Meng-Liang Lin of Hsinchu (TW)]]

[[:Category:Ying-Ju Chen of Tuku Township (TW)|Ying-Ju Chen of Tuku Township (TW)]][[Category:Ying-Ju Chen of Tuku Township (TW)]]

[[:Category:Shin-Puu Jeng of Po-Shan Village (TW)|Shin-Puu Jeng of Po-Shan Village (TW)]][[Category:Shin-Puu Jeng of Po-Shan Village (TW)]]

==REDISTRIBUTION STRUCTURE WITH COPPER BUMPS ON PLANAR METAL INTERCONNECTS AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17826223 titled 'REDISTRIBUTION STRUCTURE WITH COPPER BUMPS ON PLANAR METAL INTERCONNECTS AND METHODS OF FORMING THE SAME

==Simplified Explanation==

The patent application describes a method for forming redistribution interconnect structures on a carrier wafer, attaching semiconductor dies to these structures, and then exposing the interconnect structures by removing the carrier wafer. Fan-out bump structures are then formed on the exposed surfaces.

* Method for forming redistribution interconnect structures on a carrier wafer
* Semiconductor dies are attached to the redistribution structures
* Carrier wafer and adhesive layer are removed to expose the interconnect structures
* Fan-out bump structures are formed on the exposed surfaces


==Original Abstract Submitted==

First redistribution interconnect structures having a respective uniform thickness throughout are formed on a top surface of a first adhesive layer over a first carrier wafer. Redistribution dielectric layers and additional redistribution interconnect structures are formed over the first redistribution interconnect structures to provide at least one redistribution structure. A respective set of one or more semiconductor dies is attached to each of the at least one redistribution structure. The first redistribution interconnect structures are physically exposed by removing the first carrier wafer and the first adhesive layer. Fan-out bump structures are formed on the physically exposed first planar surfaces of the first redistribution interconnect structures.



[[Category:H01L23/498]]
[[Category:H01L21/48]]