View source for Tokyo electron limited (20240339309). Advanced OES Characterization simplified abstract

=Advanced OES Characterization=


==Organization Name==

[[:Category:tokyo electron limited|tokyo electron limited]]


[[Category:tokyo electron limited]]

==Inventor(s)==

[[:Category:Sergey Voronin of Albany NY (US)|Sergey Voronin of Albany NY (US)]][[Category:Sergey Voronin of Albany NY (US)]]

[[:Category:Francisco Machuca of Fremont CA (US)|Francisco Machuca of Fremont CA (US)]][[Category:Francisco Machuca of Fremont CA (US)]]

[[:Category:Blaze Messer of Albany NY (US)|Blaze Messer of Albany NY (US)]][[Category:Blaze Messer of Albany NY (US)]]

[[:Category:Yan Chen of Fremont CA (US)|Yan Chen of Fremont CA (US)]][[Category:Yan Chen of Fremont CA (US)]]

[[:Category:Ying Zhu of Fremont CA (US)|Ying Zhu of Fremont CA (US)]][[Category:Ying Zhu of Fremont CA (US)]]

[[:Category:Mihail Mihaylov of Fremont CA (US)|Mihail Mihaylov of Fremont CA (US)]][[Category:Mihail Mihaylov of Fremont CA (US)]]

[[:Category:Joel Ng of Fremont CA (US)|Joel Ng of Fremont CA (US)]][[Category:Joel Ng of Fremont CA (US)]]

[[:Category:Ashawaraya Shalini of Fremont CA (US)|Ashawaraya Shalini of Fremont CA (US)]][[Category:Ashawaraya Shalini of Fremont CA (US)]]

[[:Category:Da Song of Albany NY (US)|Da Song of Albany NY (US)]][[Category:Da Song of Albany NY (US)]]

[[:Category:Akiteru Ko of Albany NY (US)|Akiteru Ko of Albany NY (US)]][[Category:Akiteru Ko of Albany NY (US)]]

==Advanced OES Characterization - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240339309 titled 'Advanced OES Characterization

The patent application describes a processing system with a processing chamber, vacuum pumps, exhaust gas line, plasma power supply, and an optical emission spectroscopy (OES) measurement assembly.

* The processing system includes a processing chamber for holding a substrate to be processed.
* It has a first vacuum pump and a second vacuum pump downstream from the first pump.
* An exhaust gas line connects the process chamber, the first vacuum pump, and the second vacuum pump.
* A plasma power supply with a first RF power source generates a plasma from exhaust gas between the vacuum pumps.
* An OES measurement assembly with an OES detector measures OES signals from the plasma.

Potential Applications:
- Semiconductor manufacturing
- Thin film deposition processes
- Surface modification of materials

Problems Solved:
- Monitoring and controlling plasma processes
- Enhancing process efficiency and accuracy
- Improving product quality and consistency

Benefits:
- Real-time monitoring of plasma parameters
- Enhanced process control and optimization
- Increased productivity and yield in manufacturing processes

Commercial Applications:
Title: Advanced Plasma Processing System for Semiconductor Manufacturing
This technology can be used in semiconductor fabrication facilities to improve process control and product quality. It can also find applications in other industries requiring precise plasma processing.

Questions about the technology:
1. How does the OES measurement assembly contribute to process optimization?
   - The OES detector provides real-time data on plasma composition, helping operators adjust parameters for optimal processing.
2. What are the advantages of having two vacuum pumps in the system?
   - The dual pump configuration enhances gas evacuation efficiency, leading to better plasma generation and control.


==Original Abstract Submitted==

a processing system that includes: a processing chamber configured to hold a substrate to be processed; a first vacuum pump; a second vacuum pump disposed downstream from the first vacuum pump; an exhaust gas line connecting the process chamber and the first vacuum pump, and the first vacuum pump and the second vacuum pump; a plasma power supply including a first rf power source configured to generate a plasma from a portion of an exhaust gas between the first and second vacuum pumps; and an optical emission spectroscopy (oes) measurement assembly including an oes detector configured to measure oes signals from the plasma.



[[Category:H01J37/32]]
[[Category:H01J37/18]]
[[Category:CPC_H01J37/32972]]