View source for Tokyo Electron Limited patent applications on July 18th, 2024

=Patent Applications by Tokyo Electron Limited on July 18th, 2024=



[[:Category:Tokyo Electron Limited|Tokyo Electron Limited]]: 17 patent applications[[Category:Tokyo Electron Limited]]

Tokyo Electron Limited has applied for patents in the areas of [[:Category:H01L21/67|H01L21/67]] (6), [[:Category:H01J37/32|H01J37/32]] (4), [[:Category:B08B3/02|B08B3/02]] (1), [[:Category:F26B5/04|F26B5/04]] (1), [[:Category:H01L29/775|H01L29/775]] (1)
[[:Category:CPC_B08B3/022|B08B3/022]] (1), [[:Category:CPC_H01L21/561|H01L21/561]] (1), [[:Category:CPC_H01L21/76251|H01L21/76251]] (1), [[:Category:CPC_H01L21/67259|H01L21/67259]] (1), [[:Category:CPC_H01L21/67248|H01L21/67248]] (1)

With keywords such as: processing, substrate, gas, unit, space, surface, waveguide, configured, having, and container in patent application abstracts.




====Patent Applications by Tokyo Electron Limited====


[[20240238848. SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD_simplified_abstract_(tokyo electron limited)]]

Inventor(s): Takafumi KINOSHITA of Kumamoto  (JP) for tokyo electron limited, Yuki ITO of Kumamoto  (JP) for tokyo electron limited, Daisuke SAIKI of Kumamoto  (JP) for tokyo electron limited, Tomoyuki HASHIMOTO of Kumamoto  (JP) for tokyo electron limited, Yoshifumi AMANO of Kumamoto  (JP) for tokyo electron limited, Kazuhiro AIURA of Kumamoto  (JP) for tokyo electron limited, Akira FUJITA of Kumamoto  (JP) for tokyo electron limited, Shuhei TAKAHASHI of Kumamoto  (JP) for tokyo electron limited

IPC Code(s): B08B3/02, H01L21/67

CPC Code(s): B08B3/022




Abstract: a substrate processing apparatus includes a support unit, a supply unit, an annular member, a rotation unit, a cover member, and an annular flow regulation member disposed above the cover member. the annular member includes an inclined surface inclined downward toward a center of the annular member in a radial direction. the flow regulation member includes a base portion and a protrusion which faces a circumferential portion of the substrate supported on the support unit and protrudes from the base portion toward the circumferential portion of the substrate. the protrusion overlaps the support unit when viewed in a vertical direction. a lower surface of the protrusion is positioned above an upper surface of the substrate supported on the support unit and positioned below an upper surface of the annular member. an inner circumferential surface of the protrusion is inclined radially outward from an upper side to a lower side.[[Category:B08B3/02]][[Category:H01L21/67]][[Category:CPC_B08B3/022]][[Category:tokyo electron limited]]



[[20240240307. METHOD OF FORMING SILICON NITRIDE FILM_simplified_abstract_(tokyo electron limited)]]

Inventor(s): Takafumi NOGAMI of Nirasaki City  (JP) for tokyo electron limited, Yoshiki NAKANO of Nirasaki City  (JP) for tokyo electron limited

IPC Code(s): C23C16/34, C23C16/455, C23C16/505

CPC Code(s): C23C16/345




Abstract: a method of forming a silicon nitride film includes: preparing a substrate in a processing container, the substrate having a graphene film on a surface of the substrate; supplying a nitrogen-containing gas into the processing container; supplying a si precursor gas into the processing container after the nitrogen-containing gas is supplied and after a pressure control inside the processing container is stabilized; generating plasma within the processing container by supplying radio-frequency power for plasma generation after the si precursor gas is supplied and before the pressure control inside the processing container is stabilized; and forming the silicon nitride film on the graphene film by exposing the substrate to the plasma.[[Category:C23C16/34]][[Category:C23C16/455]][[Category:C23C16/505]][[Category:CPC_C23C16/345]][[Category:tokyo electron limited]]



[[20240240324. CARBON HARD MASK, FILM FORMING APPARATUS, AND FILM FORMING METHOD_simplified_abstract_(tokyo electron limited)]]

Inventor(s): Masaru HORI of Aichi  (JP) for tokyo electron limited, Makoto SEKINE of Aichi  (JP) for tokyo electron limited, Hirotsugu SUGIURA of Aichi  (JP) for tokyo electron limited, Tsuyoshi MORIYA of Nirasaki-shi, Yamanashi  (JP) for tokyo electron limited, Satoshi TANAKA of Nirasaki-shi, Yamanashi  (JP) for tokyo electron limited, Yoshinori MORISADA of Nirasaki-shi, Yamanashi  (JP) for tokyo electron limited

IPC Code(s): C23C16/52, C23C16/26, H01J37/32, H01L21/033

CPC Code(s): C23C16/52




Abstract: according to one embodiment, there is provided a carbon hard mask laminated on an etching target film, in which the concentration ratio of a methylene group chand a methyl group chcontained in the carbon hard mask satisfies the expression ch/(ch+ch)≥0.5.[[Category:C23C16/52]][[Category:C23C16/26]][[Category:H01J37/32]][[Category:H01L21/033]][[Category:CPC_C23C16/52]][[Category:tokyo electron limited]]



[[20240240859. SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING APPARATUS MAINTENANCE METHOD_simplified_abstract_(tokyo electron limited)]]

Inventor(s): Shota UMEZAKI of Koshi City  (JP) for tokyo electron limited, Takahiro HAYASHIDA of Koshi City  (JP) for tokyo electron limited, Mikio NAKASHIMA of Koshi City  (JP) for tokyo electron limited, Takafumi YASUNAGA of Koshi City  (JP) for tokyo electron limited

IPC Code(s): F26B5/00, F26B25/16

CPC Code(s): F26B5/005




Abstract: a substrate processing apparatus includes a drying unit configured to replace a liquid film formed on an upper surface of a substrate in a horizontal state with a supercritical fluid to dry the substrate, wherein the drying unit includes a pressure container provided with a drying chamber formed therein to dry the substrate, and a lid configured to close an opening of the pressure container, and the substrate processing apparatus further comprises a support member configured to support the lid so as to be movable in both a first direction parallel to the opening and a second direction opposite to the first direction.[[Category:F26B5/00]][[Category:F26B25/16]][[Category:CPC_F26B5/005]][[Category:tokyo electron limited]]



[[20240241042. SUBSTRATE PROCESSING DEVICE AND METHOD FOR MEASURING PROCESS GAS TEMPERATURE AND CONCENTRATION_simplified_abstract_(tokyo electron limited)]]

Inventor(s): Yuji OBATA of Nirasaki City, Yamanashi  (JP) for tokyo electron limited

IPC Code(s): G01N21/31, G01K11/12

CPC Code(s): G01N21/3103




Abstract: provided is a technique for using laser light to measure a temperature and concentration of a processing gas supplied to a processing space where a substrate processing is performed. a processing gas supply provided in an apparatus for processing a substrate supplies the processing gas to the processing space, and a light emitter emits laser light, having wavelengths that change within different wavelength ranges, to the processing space where the processing gas is supplied. a light receiver receives the laser light that has passed through the processing space, a temperature calculator calculates the temperature of the processing gas based on an absorption spectrum of laser light within each wavelength range, and a concentration calculator calculates the concentration of the processing gas based on an absorbance of laser light having a specific wavelength within the wavelength ranges.[[Category:G01N21/31]][[Category:G01K11/12]][[Category:CPC_G01N21/3103]][[Category:tokyo electron limited]]



[[20240241061. ANALYSIS APPARATUS, BONDING SYSTEM, AND ANALYSIS METHOD_simplified_abstract_(tokyo electron limited)]]

Inventor(s): Yuji MIMURA of Albany NY (US) for tokyo electron limited

IPC Code(s): G01N21/85, H01L21/683

CPC Code(s): G01N21/85




Abstract: an analysis apparatus according to an aspect of the present disclosure includes a substrate holding unit, an insertion unit, and a gas analysis unit. the substrate holding unit holds a polymerization substrate where a first substrate and a second substrate are bonded. the insertion unit is capable of being inserted between a bonding surface of the first substrate and a bonding surface of the second substrate in the polymerization substrate that is held by the substrate holding unit. the gas analysis unit analyzes a component(s) of a gas or gasses that is/are jetted from between a bonding surface of the first substrate and a bonding surface of the second substrate.[[Category:G01N21/85]][[Category:H01L21/683]][[Category:CPC_G01N21/85]][[Category:tokyo electron limited]]



[[20240242934. PLASMA PROCESSING APPARATUS_simplified_abstract_(tokyo electron limited)]]

Inventor(s): Masaki HIRAYAMA of Fuchu City  (JP) for tokyo electron limited

IPC Code(s): H01J37/32

CPC Code(s): H01J37/32082




Abstract: a plasma processing apparatus includes a chamber, a substrate support provided within the chamber, a discharger provided to discharge an electromagnetic wave into a plasma generation space, and a waveguide part configured to supply the electromagnetic wave to the discharger. the waveguide part includes a resonator that provides a waveguide path, and the resonator includes at least one slit having a longitudinal direction in a propagation direction in which the electromagnetic wave resonating within the resonator propagates in the waveguide path.[[Category:H01J37/32]][[Category:CPC_H01J37/32082]][[Category:tokyo electron limited]]



[[20240242936. PLASMA PROCESSING APPARATUS_simplified_abstract_(tokyo electron limited)]]

Inventor(s): Masaki HIRAYAMA of Tokyo  (JP) for tokyo electron limited

IPC Code(s): H01J37/32

CPC Code(s): H01J37/32247




Abstract: a plasma processing apparatus, includes: a chamber providing a processing space; a substrate support inside the processing space; an upper electrode provided above the substrate support via the processing space; an emitter emitting electromagnetic waves into a plasma generating space and extending in a circumferential direction around a central axis of the chamber; and a waveguide supplying the electromagnetic waves to the emitter, wherein the waveguide includes a resonator, wherein the resonator includes a first short-circuit portion constituting one end of a waveguide path and second short-circuit portions constituting the other end or beams provided along a third short-circuit portion constituting the other end by a wall surface, wherein the second short-circuit portions or the beams are arranged axisymmetric around the central axis along the circumferential direction, and wherein the second short-circuit portions or the beams and gaps electromagnetically coupled to the emitter are arranged alternately along the circumferential direction.[[Category:H01J37/32]][[Category:CPC_H01J37/32247]][[Category:tokyo electron limited]]



[[20240242937. PLASMA PROCESSING APPARATUS_simplified_abstract_(tokyo electron limited)]]

Inventor(s): Masaki HIRAYAMA of Tokyo  (JP) for tokyo electron limited

IPC Code(s): H01J37/32

CPC Code(s): H01J37/32256




Abstract: a plasma processing apparatus includes: a chamber having a processing space therein; a substrate support provided inside the processing space; an upper electrode provided above the substrate support with the processing space interposed therebetween; an emitter provided to emit electromagnetic waves into a plasma generation space and extending in a circumferential direction around a central axis of the chamber and the processing space; and a waveguide configured to supply the electromagnetic waves to the emitter; wherein the waveguide includes a resonator having a waveguide path therein, wherein the resonator includes a first short-circuiting portion constituting a first end of the waveguide path and a second short-circuiting portion constituting a second end of the waveguide path, wherein the second end of the waveguide path is electromagnetically coupled to the emitter, and wherein the second short-circuiting portion has a capacitance that short-circuits the waveguide path at a frequency of the electromagnetic waves.[[Category:H01J37/32]][[Category:CPC_H01J37/32256]][[Category:tokyo electron limited]]



[[20240242975. SUBSTRATE PROCESSING SYSTEM AND SUBSTRATE PROCESSING METHOD_simplified_abstract_(tokyo electron limited)]]

Inventor(s): Kouzou KANAGAWA of Koshi City  (JP) for tokyo electron limited, Kotaro TSURUSAKI of Koshi City  (JP) for tokyo electron limited, Keiji ONZUKA of Koshi City  (JP) for tokyo electron limited, Yoshihiro KAI of Koshi City  (JP) for tokyo electron limited

IPC Code(s): H01L21/56, H01L21/02

CPC Code(s): H01L21/561




Abstract: a substrate processing system includes: a batch-type processing part that collectively processes a lot including substrates arranged at a first pitch; a single-substrate-type processing part that processes the substrates of the lot one by one; and an interface part that delivers the substrates between the batch-type processing part and the single-substrate-type processing part. the batch-type processing part includes a processing bath that stores a processing solution having a lump shape or a mist shape, a first holder that holds the substrates arranged at the first pitch, and a second holder that receives the substrates arranged at a second pitch from the first holder in the processing solution. the interface part includes a transfer part that transfers the substrates held separately by the first and second holders in the processing solution, from the batch-type processing part to the single-substrate-type processing part.[[Category:H01L21/56]][[Category:H01L21/02]][[Category:CPC_H01L21/561]][[Category:tokyo electron limited]]



[[20240242976. GAS SUPPLY DEVICE AND SEMICONDUCTOR MANUFACTURING APPARATUS_simplified_abstract_(tokyo electron limited)]]

Inventor(s): Jun HIROSE of Miyagi  (JP) for tokyo electron limited, Atsushi SAWACHI of Miyagi  (JP) for tokyo electron limited, Takahiro MATSUDA of Osaka  (JP) for tokyo electron limited, Kazunari WATANABE of Osaka  (JP) for tokyo electron limited, Kohei SHIGYOU of Osaka  (JP) for tokyo electron limited, Taiki HOSHIKO of Osaka  (JP) for tokyo electron limited

IPC Code(s): H01L21/67

CPC Code(s): H01L21/67017




Abstract: a gas supply device capable of saving space and supplying a mixed gas having components with stable concentration to a processing chamber in a short time includes: a plurality of fluid control units each including a flow path through which gas flows, and fluid control devices provided in the middle of the flow path; a merging flow path including a plurality of connecting portions fluidly connected to the plurality of fluid control units and a single gas outlet portion which derives the gas introduced through the plurality of connecting portions; wherein a plurality of connecting portions is arranged symmetrically with respect to the gas outlet portion in the flow path direction of the merging flow path, and two or more fluid control units are fluidly connected to each of the plurality of connecting portions.[[Category:H01L21/67]][[Category:CPC_H01L21/67017]][[Category:tokyo electron limited]]



[[20240242977. SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD_simplified_abstract_(tokyo electron limited)]]

Inventor(s): Shota Umezaki of Koshi City  (JP) for tokyo electron limited, Takahiro Hayashida of Koshi City  (JP) for tokyo electron limited, Mikio Nakashima of Koshi City  (JP) for tokyo electron limited, Takafumi Yasunaga of Koshi City  (JP) for tokyo electron limited

IPC Code(s): H01L21/67

CPC Code(s): H01L21/67023




Abstract: a substrate processing apparatus includes a unit block including multiple liquid film forming devices each configured to form a liquid film on a top surface of a substrate, and a drying device configured to replace the liquid film with a supercritical fluid to dry the substrate; and a transfer block provided between the multiple liquid film forming devices and the drying device. the transfer block includes a transfer device configured to transfer the substrate between the multiple liquid film forming devices and the drying device, and a length of a transfer path of the substrate is equal between each of the multiple liquid film forming devices and the drying device.[[Category:H01L21/67]][[Category:CPC_H01L21/67023]][[Category:tokyo electron limited]]



[[20240242978. SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING APPARATUS MAINTENANCE METHOD_simplified_abstract_(tokyo electron limited)]]

Inventor(s): Shota UMEZAKI of Koshi City  (JP) for tokyo electron limited, Shigeru MORIYAMA of Koshi City  (JP) for tokyo electron limited, Tomotaka OMAGARI of Koshi City  (JP) for tokyo electron limited, Keiichi YAHATA of Koshi City  (JP) for tokyo electron limited, Shuji OIE of Koshi City  (JP) for tokyo electron limited, Yuichi TANAKA of Koshi City  (JP) for tokyo electron limited, Katsuhiro OOKAWA of Koshi City  (JP) for tokyo electron limited, Manabu YAMANAKA of Koshi City  (JP) for tokyo electron limited, Takuya ITAHASHI of Koshi City  (JP) for tokyo electron limited

IPC Code(s): H01L21/67, F26B5/04

CPC Code(s): H01L21/67034




Abstract: a substrate processing apparatus includes a drying unit for replacing a liquid film formed on a substrate with a supercritical fluid to dry the substrate, and a control device. the drying unit includes a pressure container, a supply mechanism for supplying fluid to the pressure container, a discharge mechanism for discharging the fluid from the pressure container, a panel for separating an internal space from an external space, an electromagnetic lock, and a concentration sensor for detecting a concentration of the fluid. an unlocking condition for the control device to switch a state of the electromagnetic lock from a locked state to an unlocked state includes a condition that a detection value of the pressure sensor is less than or equal to a first threshold value and a condition that a detection value of the concentration sensor is less than or equal to a second threshold value.[[Category:H01L21/67]][[Category:F26B5/04]][[Category:CPC_H01L21/67034]][[Category:tokyo electron limited]]



[[20240242987. WAFER TEMPERATURE MEASUREMENT FOR WET ETCHING BATH APPLICATIONS_simplified_abstract_(tokyo electron limited)]]

Inventor(s): Ivan MALEEV of Fremont CA (US) for tokyo electron limited, Yaowu MA of Fremont CA (US) for tokyo electron limited, Zheng YAN of Fremont CA (US) for tokyo electron limited, Basanta BHADURI of Fremont CA (US) for tokyo electron limited

IPC Code(s): H01L21/67, G01K1/02, G01K11/00

CPC Code(s): H01L21/67248




Abstract: aspects of the disclosure provide a wet etch semiconductor-processing system, which can include a wet processing bath configured to be filled with a processing liquid and configured for one or more semiconductor samples to be placed vertically in parallel therein and immersed in the processing liquid, and a sensor optically coupled to one of the semiconductor samples. the sensor can be configured to form an illumination beam, collect bandgap photoluminescence (pl) light excited by the illumination beam onto a surface of the semiconductor sample at an illuminated spot, and measure spectral intensities of the bandgap pl light in a vicinity of a semiconductor bandgap wavelength of the semiconductor sample. the sensor can be arranged with respect to the wet processing bath such that the sensor directs the illumination beam onto the surface of the semiconductor sample at the illuminated spot and receives the bandgap pl light from the illuminated spot.[[Category:H01L21/67]][[Category:G01K1/02]][[Category:G01K11/00]][[Category:CPC_H01L21/67248]][[Category:tokyo electron limited]]



[[20240242988. PROCESSING APPARATUS AND ALIGNMENT METHOD_simplified_abstract_(tokyo electron limited)]]

Inventor(s): Kiyoshi MORI of Fuchu City  (JP) for tokyo electron limited

IPC Code(s): H01L21/67, H01L21/687

CPC Code(s): H01L21/67259




Abstract: a processing apparatus includes: a processing container having a plurality of processing spaces formed in the processing container; a rotary arm including a rotational shaft located at a central portion of the processing container and a plurality of end effectors configured to rotate around the rotational shaft and to hold a plurality of wafers which is equal in number to the plurality of processing spaces; and a sensor configured to detect positions of the plurality of end effectors. among the plurality of end effectors, at least one end effector at a position corresponding to the sensor has a different shape from shapes of other end effectors at the position corresponding to the sensor.[[Category:H01L21/67]][[Category:H01L21/687]][[Category:CPC_H01L21/67259]][[Category:tokyo electron limited]]



[[20240243006. SYSTEMS AND METHODS FOR BONDING SEMICONDUCTOR DEVICES_simplified_abstract_(tokyo electron limited)]]

Inventor(s): Scott Lefevre of Albany NY (US) for tokyo electron limited, Arkalgud Sitaram of Albany NY (US) for tokyo electron limited, Kevin Ryan of Albany NY (US) for tokyo electron limited, Ilseok Son of Albany NY (US) for tokyo electron limited, Panupong Jaipan of Albany NY (US) for tokyo electron limited

IPC Code(s): H01L21/762, H01L21/321

CPC Code(s): H01L21/76251




Abstract: in some implementations, a method may include providing a silicon on insulator (soi) substrate having a first semiconductor layer, a buried oxide layer over the first semiconductor region, and a second semiconductor region over the buried oxide, the second semiconductor region having a plurality of recesses exposing the underlying buried oxide, each recess having a shape and size configured to accommodate a die. in addition, the device may include bonding a plurality of semiconductor dies to the buried oxide through the plurality of recesses.[[Category:H01L21/762]][[Category:H01L21/321]][[Category:CPC_H01L21/76251]][[Category:tokyo electron limited]]



[[20240243182. MICROELECTRONIC DEVICE AND METHOD OF FORMING_simplified_abstract_(tokyo electron limited)]]

Inventor(s): H. Jim Fulford of Marianna FL (US) for tokyo electron limited, Mark I. Gardner of Cedar Creek TX (US) for tokyo electron limited

IPC Code(s): H01L29/423, H01L21/8234, H01L27/06, H01L29/06, H01L29/417, H01L29/66, H01L29/775, H01L29/786

CPC Code(s): H01L29/42392




Abstract: in some implementations, the device may include a vertical transistor having a first source/drain (s/d) region adjacent a substrate, a channel region above the first s/d region, and a second s/d region. in addition, the device includes a capacitor having two conductive regions separated by a dielectric region, one of the two conductive regions electrically coupled to the second s/d region.[[Category:H01L29/423]][[Category:H01L21/8234]][[Category:H01L27/06]][[Category:H01L29/06]][[Category:H01L29/417]][[Category:H01L29/66]][[Category:H01L29/775]][[Category:H01L29/786]][[Category:CPC_H01L29/42392]][[Category:tokyo electron limited]]



[[Tokyo Electron Limited patent applications on July 18th, 2024]]



[[Category:Tokyo Electron Limited]] [[Category:H01L21/67]] [[Category:H01J37/32]] [[Category:B08B3/02]] [[Category:F26B5/04]] [[Category:H01L29/775]]