View source for Taiwan semiconductor manufacturing company, ltd. (20250130499). RESIST UNDERLAYER COMPOSITION

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=RESIST UNDERLAYER COMPOSITION=


==Organization Name==

[[:Category:taiwan semiconductor manufacturing company, ltd.|taiwan semiconductor manufacturing company, ltd.]]


[[Category:taiwan semiconductor manufacturing company, ltd.]]

==Inventor(s)==

[[:Category:Yen-Yu Kuo of Hsinchu TW|Yen-Yu Kuo of Hsinchu TW]][[Category:Yen-Yu Kuo of Hsinchu TW]]

[[:Category:An-Ren Zi of Hsinchu TW|An-Ren Zi of Hsinchu TW]][[Category:An-Ren Zi of Hsinchu TW]]

[[:Category:Ching-Yu Chang of Hsinchu TW|Ching-Yu Chang of Hsinchu TW]][[Category:Ching-Yu Chang of Hsinchu TW]]

==RESIST UNDERLAYER COMPOSITION==


This abstract first appeared for US patent application 20250130499 titled 'RESIST UNDERLAYER COMPOSITION

==Original Abstract Submitted==

a resist underlayer composition for extreme ultraviolet lithography is provided. the composition includes a first polymer, a second polymer, an acid generator and a solvent. the first polymer includes a first polymer backbone and an etching resistance enhancement unit covalently bonded to the first polymer backbone via a first linker. the etching resistance enhancement unit includes a silicon-containing unit including silicon-oxygen bonds or a metal-containing unit including metal-oxygen bonds. the second polymer includes a second polymer backbone and a crosslinker unit covalently bonded to the second polymer backbone via a second linker. the crosslinker unit includes one or more crosslinkable groups.



[[Category:G03F7/11]]
[[Category:C08L43/04]]
[[Category:H01L21/027]]
[[Category:CPC_G03F7/11]]