View source for Taiwan semiconductor manufacturing company, ltd. (20240339144). Magnetoresistive Random-Access Memory (MRAM) Cell and Method of Operation Thereof simplified abstract

=Magnetoresistive Random-Access Memory (MRAM) Cell and Method of Operation Thereof=


==Organization Name==

[[:Category:taiwan semiconductor manufacturing company, ltd.|taiwan semiconductor manufacturing company, ltd.]]


[[Category:taiwan semiconductor manufacturing company, ltd.]]

==Inventor(s)==

[[:Category:Harry-Hak-Lay Chuang of Zhubei City (TW)|Harry-Hak-Lay Chuang of Zhubei City (TW)]][[Category:Harry-Hak-Lay Chuang of Zhubei City (TW)]]

[[:Category:Ching-Huang Wang of Hsinchu (TW)|Ching-Huang Wang of Hsinchu (TW)]][[Category:Ching-Huang Wang of Hsinchu (TW)]]

[[:Category:Hung Cho Wang of Hsinchu (TW)|Hung Cho Wang of Hsinchu (TW)]][[Category:Hung Cho Wang of Hsinchu (TW)]]

[[:Category:Tien-Wei Chiang of Taipei City (TW)|Tien-Wei Chiang of Taipei City (TW)]][[Category:Tien-Wei Chiang of Taipei City (TW)]]

[[:Category:Wen-Chun You of Yilan County (TW)|Wen-Chun You of Yilan County (TW)]][[Category:Wen-Chun You of Yilan County (TW)]]

==Magnetoresistive Random-Access Memory (MRAM) Cell and Method of Operation Thereof - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240339144 titled 'Magnetoresistive Random-Access Memory (MRAM) Cell and Method of Operation Thereof

The abstract describes an exemplary magnetoresistive random-access memory (MRAM) cell that can store more than one bit. The cell includes two magnetic tunneling junctions (MTJs) connected in parallel, with the second MTJ having a smaller diameter than the first. A transistor, bit line, word line, and source line are also part of the cell. The method of writing to the MRAM cell involves supplying different write voltages based on the initial and desired memory states.

* MRAM cell configured to store more than one bit
* Includes two MTJs connected in parallel, with different diameters
* Transistor, bit line, word line, and source line also part of the cell
* Method of writing involves supplying different write voltages
* Based on initial and desired memory states

Potential Applications:
- High-density memory storage
- Faster data access and retrieval
- Energy-efficient computing systems

Problems Solved:
- Increased storage capacity in a single cell
- Improved data processing speed
- Enhanced energy efficiency in memory systems

Benefits:
- Higher memory density
- Faster data processing
- Reduced power consumption

Commercial Applications:
Title: Multi-bit MRAM Cells for High-Density Memory Applications
This technology can be utilized in:
- Data centers
- IoT devices
- Mobile phones and tablets

Questions about MRAM technology:
1. How does the size difference between the two MTJs in the MRAM cell impact its performance?
   The size difference allows for storing multiple bits in a single cell, increasing memory density.
2. What are the advantages of using MRAM technology over traditional memory storage methods?
   MRAM offers faster data access, lower power consumption, and non-volatility, making it ideal for various applications.


==Original Abstract Submitted==

an exemplary magnetoresistive random-access memory (mram) cell is configured to store more than one bit. the mram cell includes a first magnetic tunneling junction (mtj) and a second mtj connected in parallel. the first mtj has a first diameter, the second mtj has a second diameter, and the second diameter is less than the first diameter. the mram cell further includes a transistor connected to the first mtj and the second mtj, a bit line connected to the first mtj and the second mtj, a word line connected to the transistor, and a source line connected to the transistor. a method of writing to the mram cell can include supplying one or more write voltages to the mram cell (e.g., having different levels) depending on an initial memory state and a desired memory state of the mram cell.



[[Category:G11C11/16]]
[[Category:CPC_G11C11/1675]]