View source for Taiwan semiconductor manufacturing company, ltd. (20240213305). METAL-INSULATOR-METAL STRUCTURE AND METHODS OF FABRICATION THEREOF simplified abstract

=METAL-INSULATOR-METAL STRUCTURE AND METHODS OF FABRICATION THEREOF=


==Organization Name==

[[:Category:taiwan semiconductor manufacturing company, ltd.|taiwan semiconductor manufacturing company, ltd.]]


[[Category:taiwan semiconductor manufacturing company, ltd.]]

==Inventor(s)==

[[:Category:Chih-Fan Huang of Kaohsiung City (TW)|Chih-Fan Huang of Kaohsiung City (TW)]][[Category:Chih-Fan Huang of Kaohsiung City (TW)]]

[[:Category:Hung-Chao Kao of Taipei City (TW)|Hung-Chao Kao of Taipei City (TW)]][[Category:Hung-Chao Kao of Taipei City (TW)]]

[[:Category:Yuan-Yang Hsiao of Taipei (TW)|Yuan-Yang Hsiao of Taipei (TW)]][[Category:Yuan-Yang Hsiao of Taipei (TW)]]

[[:Category:Tsung-Chieh Hsiao of Changhua County (TW)|Tsung-Chieh Hsiao of Changhua County (TW)]][[Category:Tsung-Chieh Hsiao of Changhua County (TW)]]

[[:Category:Hsiang-Ku Shen of Hsinchu City (TW)|Hsiang-Ku Shen of Hsinchu City (TW)]][[Category:Hsiang-Ku Shen of Hsinchu City (TW)]]

[[:Category:Hui-Chi Chen of Hsinchu County (TW)|Hui-Chi Chen of Hsinchu County (TW)]][[Category:Hui-Chi Chen of Hsinchu County (TW)]]

[[:Category:Dian-Hau Chen of Hsinchu (TW)|Dian-Hau Chen of Hsinchu (TW)]][[Category:Dian-Hau Chen of Hsinchu (TW)]]

[[:Category:Yen-Ming Chen of Hsin-Chu County (TW)|Yen-Ming Chen of Hsin-Chu County (TW)]][[Category:Yen-Ming Chen of Hsin-Chu County (TW)]]

==METAL-INSULATOR-METAL STRUCTURE AND METHODS OF FABRICATION THEREOF - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240213305 titled 'METAL-INSULATOR-METAL STRUCTURE AND METHODS OF FABRICATION THEREOF

The present disclosure pertains to a semiconductor device with a multi-layer interconnect structure, a dielectric layer, and a metal-insulator-metal (MIM) capacitor.

* The semiconductor device includes a multi-layer interconnect structure over a substrate.
* A dielectric layer is placed over the multi-layer interconnect structure.
* A MIM capacitor is positioned over the dielectric layer.
* The MIM capacitor consists of a bottom electrode on the dielectric layer, a top electrode above the bottom electrode, and an insulating layer between them.
* The bottom electrode has a slanted sidewall, while the top electrode has a vertical sidewall.
* The insulating layer covers the slanted sidewall of the bottom electrode.

Potential Applications:
- This technology can be used in integrated circuits for various electronic devices.
- It can enhance the performance and efficiency of semiconductor devices.

Problems Solved:
- Improved capacitance and electrical performance in semiconductor devices.
- Enhanced reliability and stability of the MIM capacitor structure.

Benefits:
- Higher capacitance density.
- Better signal transmission and reduced signal loss.
- Increased overall performance and reliability of semiconductor devices.

Commercial Applications:
- This technology can be applied in the manufacturing of advanced electronic devices such as smartphones, tablets, and computers.
- It can also be utilized in the automotive industry for vehicle electronics.

Questions about the Technology:
1. How does the slanted sidewall of the bottom electrode contribute to the performance of the MIM capacitor?
2. What are the specific advantages of having a vertical sidewall for the top electrode in this semiconductor device?

Frequently Updated Research:
- Stay updated on advancements in semiconductor technology and materials science to enhance the performance of MIM capacitors in semiconductor devices.


==Original Abstract Submitted==

the present disclosure is directed to a semiconductor device. the semiconductor device includes a multi-layer interconnect structure disposed over a substrate, a dielectric layer disposed over the multi-layer interconnect structure, and a metal-insulator-metal (mim) capacitor disposed over the dielectric layer. the mim capacitor includes a bottom electrode disposed on a top surface of the dielectric layer, a top electrode disposed above the bottom electrode, and an insulating layer interposed between the bottom electrode and the top electrode. the bottom electrode has a slanted sidewall with respect to the top surface of the dielectric layer. the top electrode has a vertical sidewall with respect to the top surface of the dielectric layer. the insulating layer covers the slanted sidewall of the bottom electrode.



[[Category:H01G4/005]]
[[Category:H01L21/311]]
[[Category:H01L21/768]]
[[Category:H01L23/522]]
[[Category:H10B61/00]]
[[Category:CPC_H01L28/60]]