View source for Taiwan semiconductor manufacturing company, ltd. (20240203740). SELF-PROTECTIVE LAYER FORMED ON HIGH-K DIELECTRIC LAYER simplified abstract

=SELF-PROTECTIVE LAYER FORMED ON HIGH-K DIELECTRIC LAYER=


==Organization Name==

[[:Category:taiwan semiconductor manufacturing company, ltd.|taiwan semiconductor manufacturing company, ltd.]]


[[Category:taiwan semiconductor manufacturing company, ltd.]]

==Inventor(s)==

[[:Category:Ju-Li Huang of Mingjian Township (TW)|Ju-Li Huang of Mingjian Township (TW)]][[Category:Ju-Li Huang of Mingjian Township (TW)]]

[[:Category:Ying-Liang Chuang of Zhubei City (TW)|Ying-Liang Chuang of Zhubei City (TW)]][[Category:Ying-Liang Chuang of Zhubei City (TW)]]

[[:Category:Ming-Hsi Yeh of Hsinchu (TW)|Ming-Hsi Yeh of Hsinchu (TW)]][[Category:Ming-Hsi Yeh of Hsinchu (TW)]]

[[:Category:Kuo-Bin Huang of Jhubei City (TW)|Kuo-Bin Huang of Jhubei City (TW)]][[Category:Kuo-Bin Huang of Jhubei City (TW)]]

==SELF-PROTECTIVE LAYER FORMED ON HIGH-K DIELECTRIC LAYER - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240203740 titled 'SELF-PROTECTIVE LAYER FORMED ON HIGH-K DIELECTRIC LAYER

'''Simplified Explanation:'''
The patent application describes semiconductor device structures with metal gate structures that have tunable work function values. These structures involve a first gate structure and a second gate structure on a substrate, with different materials for the metal gates and a self-protective layer with metal phosphate.

* The patent application introduces semiconductor device structures with metal gate structures that have tunable work function values.
* The structures consist of a first gate structure and a second gate structure on a substrate.
* The first gate structure includes a first work function metal with a first material, while the second gate structure includes a second work function metal with a second material.
* A gate dielectric layer and a self-protective layer with metal phosphate are also part of the first gate structure.
* The self-protective layer supports the first work function metal on the first gate structure.

'''Potential Applications:'''
1. Advanced semiconductor devices with improved performance.
2. Enhanced control over the work function values in metal gate structures.
3. Increased efficiency in electronic devices.

'''Problems Solved:'''
1. Difficulty in controlling work function values in metal gate structures.
2. Limited performance of traditional semiconductor devices.
3. Challenges in optimizing electronic device efficiency.

'''Benefits:'''
1. Tunable work function values for better device performance.
2. Enhanced functionality and control in semiconductor devices.
3. Improved efficiency and reliability in electronic applications.

'''Commercial Applications:'''
Title: "Innovative Semiconductor Device Structures with Tunable Metal Gate Work Function Values"
This technology could be utilized in the production of advanced electronic devices, such as smartphones, tablets, and computers, to enhance their performance and efficiency. The market implications include increased demand for high-performance semiconductor components in various industries.

'''Questions about Semiconductor Device Structures with Metal Gate Structures:'''
1. What are the potential implications of tunable work function values in metal gate structures for the semiconductor industry?
2. How does the self-protective layer with metal phosphate contribute to the overall performance of the semiconductor devices?


==Original Abstract Submitted==

semiconductor device structures having metal gate structures with tunable work function values are provided. in one example, a first gate structure and a second gate structure formed on a substrate, wherein the first gate structure includes a first work function metal having a first material, and the second gate structure includes a second work function metal having a second material, the first material being different from the second material, wherein the first gate structure further includes a gate dielectric layer, a self-protective layer having metal phosphate, and the first work function metal on the self-protective layer.



[[Category:H01L21/28]]
[[Category:H01L21/3213]]
[[Category:H01L21/8238]]
[[Category:H01L27/092]]
[[Category:H01L29/49]]
[[Category:H01L29/51]]
[[Category:H01L29/66]]
[[Category:CPC_H01L21/28247]]