View source for Taiwan semiconductor manufacturing company, ltd. (20240120239). MULTI-GATE DEVICE FABRICATION METHODS AND RELATED STRUCTURES simplified abstract

=MULTI-GATE DEVICE FABRICATION METHODS AND RELATED STRUCTURES=


==Organization Name==

[[:Category:taiwan semiconductor manufacturing company, ltd.|taiwan semiconductor manufacturing company, ltd.]]


[[Category:taiwan semiconductor manufacturing company, ltd.]]

==Inventor(s)==

[[:Category:Cheng-Wei Chang of Hsinchu (TW)|Cheng-Wei Chang of Hsinchu (TW)]][[Category:Cheng-Wei Chang of Hsinchu (TW)]]

[[:Category:Chi-Yu Chou of Hsinchu County (TW)|Chi-Yu Chou of Hsinchu County (TW)]][[Category:Chi-Yu Chou of Hsinchu County (TW)]]

[[:Category:Lun-Kuang Tan of Hsinchu City (TW)|Lun-Kuang Tan of Hsinchu City (TW)]][[Category:Lun-Kuang Tan of Hsinchu City (TW)]]

[[:Category:Shuen-Shin Liang of Hsinchu County (TW)|Shuen-Shin Liang of Hsinchu County (TW)]][[Category:Shuen-Shin Liang of Hsinchu County (TW)]]

==MULTI-GATE DEVICE FABRICATION METHODS AND RELATED STRUCTURES - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240120239 titled 'MULTI-GATE DEVICE FABRICATION METHODS AND RELATED STRUCTURES

==Simplified Explanation==

The abstract describes a method for modulating the threshold voltage of a device by providing a fin with semiconductor channel layers for a p-type transistor, forming a gate dielectric layer, and a p-type metal film, followed by annealing and removing the metal film.

* Explanation of the patent:
   - Method for modulating threshold voltage of a device
   - Utilizes a fin with semiconductor channel layers for a p-type transistor
   - Forms a gate dielectric layer surrounding the semiconductor channel layers
   - Adds a p-type metal film around the gate dielectric layer
   - Anneals the semiconductor device
   - Removes the p-type metal film

* Potential applications of this technology:
   - Semiconductor devices
   - Integrated circuits
   - Transistors

* Problems solved by this technology:
   - Modulating threshold voltage of a device
   - Enhancing performance of semiconductor devices
   - Improving efficiency of integrated circuits

* Benefits of this technology:
   - Increased control over device threshold voltage
   - Enhanced device performance
   - Improved reliability and stability

* Potential commercial applications of this technology:
   - Electronics industry
   - Semiconductor manufacturing companies
   - Research and development in semiconductor technology

* Possible prior art:
   - Prior methods of modulating threshold voltage in semiconductor devices
   - Previous techniques for enhancing transistor performance

Questions:

1. How does the method of forming a gate dielectric layer impact the threshold voltage modulation process?
2. What are the specific materials used in the p-type metal film and how do they contribute to the modulation of the threshold voltage?


==Original Abstract Submitted==

a method for modulating a threshold voltage of a device. the method includes providing a fin extending from a substrate, where the fin includes a plurality of semiconductor channel layers defining a channel region for a p-type transistor. in some embodiments, the method further includes forming a first gate dielectric layer surrounding at least three sides of each of the plurality of semiconductor channel layers of the p-type transistor. thereafter, the method further includes forming a p-type metal film surrounding the first gate dielectric layer. in an example, and after forming the p-type metal film, the method further includes annealing the semiconductor device. after the annealing, and in some embodiments, the method includes removing the p-type metal film.



[[Category:H01L21/8238]]
[[Category:H01L29/06]]
[[Category:H01L29/423]]
[[Category:H01L29/66]]