View source for Taiwan semiconductor manufacturing company, ltd. (20240105794). FIELD EFFECT TRANSISTOR WITH GATE ELECTRODE HAVING MULTIPLE GATE LENGTHS simplified abstract

=FIELD EFFECT TRANSISTOR WITH GATE ELECTRODE HAVING MULTIPLE GATE LENGTHS=


==Organization Name==

[[:Category:taiwan semiconductor manufacturing company, ltd.|taiwan semiconductor manufacturing company, ltd.]]


[[Category:taiwan semiconductor manufacturing company, ltd.]]

==Inventor(s)==

[[:Category:Pei-Yu Wang of Hsinchu (TW)|Pei-Yu Wang of Hsinchu (TW)]][[Category:Pei-Yu Wang of Hsinchu (TW)]]

==FIELD EFFECT TRANSISTOR WITH GATE ELECTRODE HAVING MULTIPLE GATE LENGTHS - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240105794 titled 'FIELD EFFECT TRANSISTOR WITH GATE ELECTRODE HAVING MULTIPLE GATE LENGTHS

==Simplified Explanation==

The abstract describes an integrated circuit with a semiconductor nanostructure transistor, featuring multiple semiconductor nanostructures serving as channel regions. A gate metal surrounds the semiconductor nanostructures, with varying gate length dimensions above the nanostructures compared to between them.

* The integrated circuit includes a semiconductor nanostructure transistor.
* The transistor comprises multiple semiconductor nanostructures acting as channel regions.
* A gate metal encloses the semiconductor nanostructures.
* The gate metal has different gate length dimensions above the nanostructures versus between them.

== Potential Applications ==
The technology described in this patent application could have potential applications in the following areas:
* Nanoelectronics
* Semiconductor manufacturing
* Integrated circuit design

== Problems Solved ==
The innovation addresses several issues in the field of semiconductor technology, such as:
* Improving transistor performance
* Enhancing gate control
* Increasing circuit density

== Benefits ==
The technology offers various benefits, including:
* Higher efficiency
* Improved speed
* Enhanced reliability

== Potential Commercial Applications ==
With its unique design and capabilities, this technology could find commercial applications in:
* Mobile devices
* Computer processors
* IoT devices

== Possible Prior Art ==
One possible prior art in this field is the use of FinFET transistors, which also involve multiple gate structures for improved control and performance.

== Unanswered Questions ==
=== How does this technology compare to existing transistor designs in terms of performance and efficiency? ===
The article does not provide a direct comparison with other transistor designs to evaluate its advantages and limitations.

=== What are the specific manufacturing processes required to implement this semiconductor nanostructure transistor? ===
The article does not delve into the detailed manufacturing processes involved in creating and integrating this innovative transistor design.


==Original Abstract Submitted==

an integrated circuit includes a semiconductor nanostructure transistor. the semiconductor nanostructure transistor includes a plurality of semiconductor nanostructures corresponding to channel regions conductor nanostructure transistor. a gate metal surrounds the semiconductor nanostructures. the gate metal has differing gate length dimension above the semiconductor nanostructures compared to the gate length between the semiconductor nanostructures.



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