View source for Taiwan semiconductor manufacturing co., ltd. (20250120139). SEMICONDUCTOR DEVICE STRUCTURE

=SEMICONDUCTOR DEVICE STRUCTURE=


==Organization Name==

[[:Category:taiwan semiconductor manufacturing co., ltd.|taiwan semiconductor manufacturing co., ltd.]]


[[Category:taiwan semiconductor manufacturing co., ltd.]]

==Inventor(s)==

[[:Category:Chun-Fai Cheng of Tin Shui Wa HK|Chun-Fai Cheng of Tin Shui Wa HK]][[Category:Chun-Fai Cheng of Tin Shui Wa HK]]

[[:Category:Liang-Yi Chen of Taipei City TW|Liang-Yi Chen of Taipei City TW]][[Category:Liang-Yi Chen of Taipei City TW]]

[[:Category:Chi-An Wang of Hsinchu City TW|Chi-An Wang of Hsinchu City TW]][[Category:Chi-An Wang of Hsinchu City TW]]

[[:Category:Kuan-Chung Chen of Taipei City TW|Kuan-Chung Chen of Taipei City TW]][[Category:Kuan-Chung Chen of Taipei City TW]]

[[:Category:Chih-Wei Lee of New Taipei City TW|Chih-Wei Lee of New Taipei City TW]][[Category:Chih-Wei Lee of New Taipei City TW]]

==SEMICONDUCTOR DEVICE STRUCTURE==


This abstract first appeared for US patent application 20250120139 titled 'SEMICONDUCTOR DEVICE STRUCTURE

==Original Abstract Submitted==

a semiconductor device structure includes nanostructures formed over a substrate. the structure also includes a fin isolation structure formed beside the nanostructures. the structure also includes a work function layer surrounding the nanostructures and covering a sidewall of the fin isolation structure. the structure also includes a gate electrode layer covering the work function layer. the gate electrode layer has an extending portion surrounded by the work function layer.



[[Category:H10D64/66]]
[[Category:H10D30/00]]
[[Category:H10D84/83]]
[[Category:CPC_H10D62/118]]