View source for Taiwan semiconductor manufacturing co., ltd. (20240329535). DOSE REDUCTION BOTTOM ANTI-REFLECTIVE COATING FOR METALLIC PHOTORESIST simplified abstract

=DOSE REDUCTION BOTTOM ANTI-REFLECTIVE COATING FOR METALLIC PHOTORESIST=


==Organization Name==

[[:Category:taiwan semiconductor manufacturing co., ltd.|taiwan semiconductor manufacturing co., ltd.]]


[[Category:taiwan semiconductor manufacturing co., ltd.]]

==Inventor(s)==

[[:Category:Yen-Yu Kuo of Hsinchu (TW)|Yen-Yu Kuo of Hsinchu (TW)]][[Category:Yen-Yu Kuo of Hsinchu (TW)]]

[[:Category:An-Ren Zi of Hsinchu (TW)|An-Ren Zi of Hsinchu (TW)]][[Category:An-Ren Zi of Hsinchu (TW)]]

[[:Category:Chen-Yu Liu of Hsinchu (TW)|Chen-Yu Liu of Hsinchu (TW)]][[Category:Chen-Yu Liu of Hsinchu (TW)]]

[[:Category:Ching-Yu Chang of Hsinchu (TW)|Ching-Yu Chang of Hsinchu (TW)]][[Category:Ching-Yu Chang of Hsinchu (TW)]]

[[:Category:Chin-Hsiang Lin of Hsinchu (TW)|Chin-Hsiang Lin of Hsinchu (TW)]][[Category:Chin-Hsiang Lin of Hsinchu (TW)]]

==DOSE REDUCTION BOTTOM ANTI-REFLECTIVE COATING FOR METALLIC PHOTORESIST - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240329535 titled 'DOSE REDUCTION BOTTOM ANTI-REFLECTIVE COATING FOR METALLIC PHOTORESIST

The method described in the patent application involves depositing a coating layer on a substrate, then forming a photoresist layer on top of the coating layer. The photoresist layer is exposed to actinic radiation and developed to create a patterned photoresist layer. The coating layer contains a polymer with specific units that produce hydrogen radicals and water upon exposure to radiation or heat.

* The method involves depositing a coating layer on a substrate.
* A photoresist layer is then formed over the coating layer.
* The photoresist layer is exposed to actinic radiation.
* The photoresist layer is developed to create a patterned photoresist layer.
* The coating layer contains a polymer with units that produce hydrogen radicals and water upon exposure to radiation or heat.

Potential Applications:
- Semiconductor manufacturing
- Photolithography processes
- Microelectronics production

Problems Solved:
- Improving the precision and efficiency of semiconductor device fabrication
- Enhancing the quality of patterned photoresist layers

Benefits:
- Increased accuracy in semiconductor device production
- Enhanced control over patterning processes
- Potential for higher yields in manufacturing

Commercial Applications:
Title: Advanced Semiconductor Device Fabrication Technology
This technology could be utilized in the production of various semiconductor devices, including microchips, sensors, and integrated circuits. The improved precision and efficiency offered by this method could lead to cost savings and enhanced performance in the semiconductor industry.

Prior Art:
Researchers interested in this technology may want to explore prior art related to photolithography processes, semiconductor device fabrication, and polymer chemistry.

Frequently Updated Research:
Researchers in the field of semiconductor manufacturing may be conducting ongoing studies on the optimization of coating layers for improved patterning processes. Stay informed about the latest developments in this area to enhance your understanding of the technology.

Questions about Semiconductor Device Fabrication:
1. How does the method described in the patent application improve the efficiency of semiconductor device fabrication?
2. What are the potential challenges associated with implementing this technology in large-scale semiconductor manufacturing processes?


==Original Abstract Submitted==

a method of forming semiconductor device includes depositing a coating layer over a substrate, forming a photoresist layer over the coating layer, exposing the photoresist layer to actinic radiation, and developing the photoresist layer to form a patterned photoresist layer. the coating layer includes a polymer containing a first unit having a pendant hydrogen donor group capable of producing a hydrogen radical upon exposure to the actinic radiation or heat, and a second unit having a pendant water donor group capable of producing water upon exposure to the actinic radiation or heat.



[[Category:G03F7/09]]
[[Category:C09D125/06]]
[[Category:C09D133/12]]
[[Category:G03F7/004]]
[[Category:H01L21/033]]
[[Category:CPC_G03F7/091]]