View source for Taiwan semiconductor manufacturing co., ltd. (20240194764). MULTI-GATE DEVICES WITH MULTI-LAYER INNER SPACERS AND FABRICATION METHODS THEREOF simplified abstract

=MULTI-GATE DEVICES WITH MULTI-LAYER INNER SPACERS AND FABRICATION METHODS THEREOF=


==Organization Name==

[[:Category:taiwan semiconductor manufacturing co., ltd.|taiwan semiconductor manufacturing co., ltd.]]


[[Category:taiwan semiconductor manufacturing co., ltd.]]

==Inventor(s)==

[[:Category:Chih-Ching Wang of Kinmen County (TW)|Chih-Ching Wang of Kinmen County (TW)]][[Category:Chih-Ching Wang of Kinmen County (TW)]]

[[:Category:Jon-Hsu Ho of New Taipei City (TW)|Jon-Hsu Ho of New Taipei City (TW)]][[Category:Jon-Hsu Ho of New Taipei City (TW)]]

[[:Category:Wen-Hsing Hsieh of Hsinchu City (TW)|Wen-Hsing Hsieh of Hsinchu City (TW)]][[Category:Wen-Hsing Hsieh of Hsinchu City (TW)]]

[[:Category:Kuan-Lun Cheng of Hsin-Chu (TW)|Kuan-Lun Cheng of Hsin-Chu (TW)]][[Category:Kuan-Lun Cheng of Hsin-Chu (TW)]]

[[:Category:Chung-Wei Wu of Hsin-Chu County (TW)|Chung-Wei Wu of Hsin-Chu County (TW)]][[Category:Chung-Wei Wu of Hsin-Chu County (TW)]]

[[:Category:Zhiqiang Wu of Hsinchu County (TW)|Zhiqiang Wu of Hsinchu County (TW)]][[Category:Zhiqiang Wu of Hsinchu County (TW)]]

==MULTI-GATE DEVICES WITH MULTI-LAYER INNER SPACERS AND FABRICATION METHODS THEREOF - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240194764 titled 'MULTI-GATE DEVICES WITH MULTI-LAYER INNER SPACERS AND FABRICATION METHODS THEREOF

The semiconductor device described in the abstract consists of semiconductor channel members, a gate dielectric layer, a gate electrode layer, a source/drain (s/d) epitaxial layer, and a dielectric spacer.

* The semiconductor channel members are placed on a substrate.
* The gate dielectric layer wraps around the semiconductor channel members.
* The gate electrode layer wraps around the semiconductor channel members and is placed on the gate dielectric layer.
* The s/d epitaxial layer is in physical contact with the semiconductor channel members.
* A dielectric spacer is positioned between the s/d epitaxial layer and the gate dielectric layer.
* The dielectric spacer consists of a first dielectric layer with a higher dielectric constant than the second dielectric layer.
* The second dielectric layer prevents direct contact between the first dielectric layer and the s/d epitaxial layer.

Potential Applications:
- This technology can be used in the manufacturing of advanced semiconductor devices.
- It can improve the performance and efficiency of electronic devices.

Problems Solved:
- Enhances the functionality and reliability of semiconductor devices.
- Provides better control and isolation of different layers within the device.

Benefits:
- Increased efficiency and performance of electronic devices.
- Enhanced reliability and longevity of semiconductor components.

Commercial Applications:
Title: Advanced Semiconductor Device Technology for Enhanced Performance
This technology can be applied in the production of high-performance electronic devices such as smartphones, computers, and other consumer electronics. It can also be utilized in the development of advanced sensors and communication devices, improving overall device functionality and user experience.

Questions about Semiconductor Device Technology:
1. How does the dielectric spacer contribute to the performance of the semiconductor device?
The dielectric spacer helps in providing isolation between different layers within the device, enhancing its overall functionality and reliability.

2. What are the potential implications of using a gate dielectric layer with a higher dielectric constant?
A gate dielectric layer with a higher dielectric constant can improve the efficiency and performance of the semiconductor device by enhancing the control of electric fields within the device.


==Original Abstract Submitted==

a semiconductor device includes semiconductor channel members disposed over a substrate, a gate dielectric layer disposed on and wrapping around the semiconductor channel members, a gate electrode layer disposed on the gate dielectric layer and wrapping around the semiconductor channel members, a source/drain (s/d) epitaxial layer in physical contact with the semiconductor channel members, and a dielectric spacer interposing the s/d epitaxial layer and the gate dielectric layer. the dielectric spacer includes a first dielectric layer in physical contact with the gate dielectric layer and a second dielectric layer in physical contact with the first dielectric layer. the first dielectric layer has a dielectric constant higher than that of the second dielectric layer. the second dielectric layer separates the first dielectric layer from physically contacting the s/d epitaxial layer.



[[Category:H01L29/66]]
[[Category:H01L21/8234]]
[[Category:H01L29/78]]
[[Category:CPC_H01L29/66484]]