View source for Taiwan semiconductor manufacturing co., ltd. (20240194525). Vias for Cobalt-Based Interconnects and Methods of Fabrication Thereof simplified abstract

=Vias for Cobalt-Based Interconnects and Methods of Fabrication Thereof=


==Organization Name==

[[:Category:taiwan semiconductor manufacturing co., ltd.|taiwan semiconductor manufacturing co., ltd.]]


[[Category:taiwan semiconductor manufacturing co., ltd.]]

==Inventor(s)==

[[:Category:Yu-Jen Chang of Hsinchu (TW)|Yu-Jen Chang of Hsinchu (TW)]][[Category:Yu-Jen Chang of Hsinchu (TW)]]

[[:Category:Hua Feng Chen of Hsinchu City (TW)|Hua Feng Chen of Hsinchu City (TW)]][[Category:Hua Feng Chen of Hsinchu City (TW)]]

[[:Category:Kuo-Hua Pan of Hsinchu City (TW)|Kuo-Hua Pan of Hsinchu City (TW)]][[Category:Kuo-Hua Pan of Hsinchu City (TW)]]

[[:Category:Min-Yann Hsieh of Kaohsiung City (TW)|Min-Yann Hsieh of Kaohsiung City (TW)]][[Category:Min-Yann Hsieh of Kaohsiung City (TW)]]

==Vias for Cobalt-Based Interconnects and Methods of Fabrication Thereof - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240194525 titled 'Vias for Cobalt-Based Interconnects and Methods of Fabrication Thereof

'''Simplified Explanation:'''
The patent application discloses interconnect structures with cobalt conductive features and vias, including multiple barrier layers and a bulk layer, for improved performance in electronic devices.

* The interconnect structure includes a conductive feature with cobalt and a via over it.
* The via consists of a first via barrier layer, a second via barrier layer, and a via bulk layer.
* The first via barrier layer contains titanium, while the second via barrier layer contains titanium and nitrogen.
* The via bulk layer may contain tungsten and/or cobalt.
* A capping layer, possibly with cobalt and silicon, is placed over the conductive feature.

'''Key Features and Innovation:'''
* Cobalt conductive feature and vias for enhanced electronic device performance.
* Multiple barrier layers and bulk layer in the via structure for improved conductivity.
* Capping layer with cobalt and silicon for protection and stability.

'''Potential Applications:'''
The technology can be applied in semiconductor manufacturing, integrated circuits, and other electronic devices requiring high-performance interconnect structures.

'''Problems Solved:'''
The technology addresses the need for reliable and efficient interconnect structures in advanced electronic devices.

'''Benefits:'''
* Improved conductivity and performance.
* Enhanced stability and protection.
* Potential for increased device lifespan.

'''Commercial Applications:'''
The technology can be utilized in the production of smartphones, computers, and other consumer electronics, as well as in industrial applications requiring high-speed data processing.

'''Prior Art:'''
Readers can explore prior research on cobalt-based interconnect structures and vias in semiconductor manufacturing and electronic device design.

'''Frequently Updated Research:'''
Stay informed about the latest developments in cobalt-based interconnect technologies and their applications in the electronics industry.

'''Questions about Cobalt-based Interconnect Structures:'''
1. How does the use of cobalt in the conductive feature improve the performance of interconnect structures?
2. What are the advantages of having multiple barrier layers in the via structure for electronic devices?


==Original Abstract Submitted==

interconnect structures and corresponding techniques for forming the interconnect structures are disclosed herein. an exemplary interconnect structure includes a conductive feature that includes cobalt and a via disposed over the conductive feature. the via includes a first via barrier layer disposed over the conductive feature, a second via barrier layer disposed over the first via barrier layer, and a via bulk layer disposed over the second via barrier layer. the first via barrier layer includes titanium, and the second via barrier layer includes titanium and nitrogen. the via bulk layer can include tungsten and/or cobalt. a capping layer may be disposed over the conductive feature, where the via extends through the capping layer to contact the conductive feature. in some implementations, the capping layer includes cobalt and silicon.



[[Category:H01L21/768]]
[[Category:H01L23/485]]
[[Category:H01L23/522]]
[[Category:H01L23/532]]
[[Category:CPC_H01L21/76846]]