View source for Sumitomo electric industries, ltd. (20240413090). SEMICONDUCTOR DEVICE

=SEMICONDUCTOR DEVICE=


==Organization Name==

[[:Category:sumitomo electric industries, ltd.|sumitomo electric industries, ltd.]]


[[Category:sumitomo electric industries, ltd.]]

==Inventor(s)==

[[:Category:Toru Hiyoshi of Osaka (JP)|Toru Hiyoshi of Osaka (JP)]][[Category:Toru Hiyoshi of Osaka (JP)]]

==SEMICONDUCTOR DEVICE==


This abstract first appeared for US patent application 20240413090 titled 'SEMICONDUCTOR DEVICE




==Original Abstract Submitted==

a semiconductor device includes an insulating substrate, a conductor pattern formed on the insulating substrate, and a plurality of semiconductor elements provided on the conductor pattern and electrically connected in parallel, wherein the conductor pattern has a minimum rectangular region surrounding the plurality of semiconductor elements in a plan view, each semiconductor element of the plurality of semiconductor elements has an epitaxial layer of a first conductivity type, the plurality of semiconductor elements include a first semiconductor element located nearest to a center of gravity of the rectangular region, and a second semiconductor element located farthest from the center of gravity of the rectangular region, and a first impurity concentration in the epitaxial layer of the first semiconductor element is higher than a second impurity concentration in the epitaxial layer of the second semiconductor element.



[[Category:H01L23/538]]
[[Category:H01L23/00]]
[[Category:H01L25/07]]
[[Category:H01L29/36]]
[[Category:H01L29/78]]
[[Category:CPC_H01L23/5386]]