View source for Sk hynix inc. (20240179918). THREE-DIMENSIONAL SEMICONDUCTOR DEVICE HAVING A SUPPORT PATTERN IN CONTACT WITH A SIDE SURFACE OF A CONTACT PLUG simplified abstract

=THREE-DIMENSIONAL SEMICONDUCTOR DEVICE HAVING A SUPPORT PATTERN IN CONTACT WITH A SIDE SURFACE OF A CONTACT PLUG=


==Organization Name==

[[:Category:sk hynix inc.|sk hynix inc.]]


[[Category:sk hynix inc.]]

==Inventor(s)==

[[:Category:Go Hyun Lee of Icheon-si (KR)|Go Hyun Lee of Icheon-si (KR)]][[Category:Go Hyun Lee of Icheon-si (KR)]]

[[:Category:Jae Taek Kim of Icheon-si (KR)|Jae Taek Kim of Icheon-si (KR)]][[Category:Jae Taek Kim of Icheon-si (KR)]]

[[:Category:Hye Yeong Jung of Icheon-si (KR)|Hye Yeong Jung of Icheon-si (KR)]][[Category:Hye Yeong Jung of Icheon-si (KR)]]

==THREE-DIMENSIONAL SEMICONDUCTOR DEVICE HAVING A SUPPORT PATTERN IN CONTACT WITH A SIDE SURFACE OF A CONTACT PLUG - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240179918 titled 'THREE-DIMENSIONAL SEMICONDUCTOR DEVICE HAVING A SUPPORT PATTERN IN CONTACT WITH A SIDE SURFACE OF A CONTACT PLUG

==Simplified Explanation==

The semiconductor device described in the abstract includes various components such as a substrate, transistor, logic interconnection, insulating layers, conductive layers, support patterns, via plugs, word line stack, dielectric layer stack, channel pillar, and via plugs.

* The semiconductor device has a substrate with a cell area and a via area.
* A transistor and logic interconnection are placed over the substrate.
* A lower insulating layer covers the transistor and logic interconnection.
* A lower conductive layer is present on the lower insulating layer in the cell area.
* A support pattern is located on the lower insulating layer in the via area.
* A lower via plug connects the support pattern and the logic interconnection.
* A word line stack is positioned on the lower conductive layer in the cell area.
* A dielectric layer stack is placed on the support pattern in the via area.
* A vertical channel pillar penetrates the word line stack to connect to the lower conductive layer.
* An upper via plug goes through the dielectric layer stack to align vertically with the lower via plug.

== Potential Applications ==
The technology described in this patent application could be applied in the development of advanced semiconductor devices for various electronic applications, such as mobile devices, computers, and communication systems.

== Problems Solved ==
This technology addresses the need for improved vertical interconnection structures in semiconductor devices, allowing for enhanced performance and efficiency in electronic circuits.

== Benefits ==
The use of vertical channel pillars and via plugs in this semiconductor device design can lead to increased packing density, reduced power consumption, and improved signal transmission speed.

== Potential Commercial Applications ==
* "Innovative Vertical Interconnection Structures for Advanced Semiconductor Devices"

== Possible Prior Art ==
There may be prior art related to vertical interconnection structures in semiconductor devices, but specific examples are not provided in this patent application.

=== Unanswered Questions ===

=== How does this technology compare to existing vertical interconnection structures in semiconductor devices? ===
This article does not provide a direct comparison with existing vertical interconnection structures in semiconductor devices. 

=== What are the potential challenges in implementing this technology on a large scale in semiconductor manufacturing processes? ===
The article does not address the potential challenges in implementing this technology on a large scale in semiconductor manufacturing processes.


==Original Abstract Submitted==

the semiconductor device includes a substrate having a cell area and a via area; a transistor and a logic interconnection disposed over the substrate; a lower insulating layer covering the transistor and the logic interconnection; a lower conductive layer on the lower insulating layer in the cell area; a support pattern disposed on the lower insulating layer in the via area; a lower via plug having a side surface in contact with the support pattern and a bottom surface in contact with the logic interconnection; a word line stack disposed on the lower conductive layer in the cell area; an dielectric layer stack disposed on the support pattern in the via area; a vertical channel pillar penetrating the word line stack to be connected to the lower conductive layer; and an upper via plug penetrating the dielectric layer stack to be vertically aligned with the lower via plug.



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