View source for Samsung electronics co., ltd. (20250126835). SEMICONDUCTOR DEVICE

=SEMICONDUCTOR DEVICE=


==Organization Name==

[[:Category:samsung electronics co., ltd.|samsung electronics co., ltd.]]


[[Category:samsung electronics co., ltd.]]

==Inventor(s)==

[[:Category:Yongjin Lee of Suwon-si KR|Yongjin Lee of Suwon-si KR]][[Category:Yongjin Lee of Suwon-si KR]]

[[:Category:Min Tae Ryu of Suwon-si KR|Min Tae Ryu of Suwon-si KR]][[Category:Min Tae Ryu of Suwon-si KR]]

[[:Category:Younggeun Song of Suwon-si KR|Younggeun Song of Suwon-si KR]][[Category:Younggeun Song of Suwon-si KR]]

[[:Category:Sanghoon Ahn of Suwon-si KR|Sanghoon Ahn of Suwon-si KR]][[Category:Sanghoon Ahn of Suwon-si KR]]

[[:Category:Min Hee Cho of Suwon-si KR|Min Hee Cho of Suwon-si KR]][[Category:Min Hee Cho of Suwon-si KR]]

[[:Category:Daewon Ha of Suwon-si KR|Daewon Ha of Suwon-si KR]][[Category:Daewon Ha of Suwon-si KR]]

==SEMICONDUCTOR DEVICE==


This abstract first appeared for US patent application 20250126835 titled 'SEMICONDUCTOR DEVICE

==Original Abstract Submitted==

a semiconductor device may include peripheral circuit structures on a substrate, an interlayer insulating layer on the peripheral circuit structure, a bit line extending in a first direction in the interlayer insulating layer, a semiconductor pattern on the bit line, and including first and second vertical portions facing each other in the first direction and a horizontal portion connecting the first and second vertical portions to each other, first and second word lines on the horizontal portion and adjacent to the first and second vertical portions, respectively, and a gate insulating pattern interposed between the first vertical portion and the first word line, and between the second vertical portion and the second word line. an upper surface of the interlayer insulating layer and an upper surface of the bit line are coplanar with each other.



[[Category:H01L29/786]]
[[Category:H01L29/66]]
[[Category:CPC_H10D30/6728]]