View source for Samsung electronics co., ltd. (20250096135). THREE-DIMENSIONAL SEMICONDUCTOR DEVICE

=THREE-DIMENSIONAL SEMICONDUCTOR DEVICE=


==Organization Name==

[[:Category:samsung electronics co., ltd.|samsung electronics co., ltd.]]


[[Category:samsung electronics co., ltd.]]

==Inventor(s)==

[[:Category:Sung-Hun Lee of Yongin-si KR|Sung-Hun Lee of Yongin-si KR]][[Category:Sung-Hun Lee of Yongin-si KR]]

[[:Category:Seokjung Yun of Iksan-si KR|Seokjung Yun of Iksan-si KR]][[Category:Seokjung Yun of Iksan-si KR]]

[[:Category:Chang-Sup Lee of Hwaseong-si KR|Chang-Sup Lee of Hwaseong-si KR]][[Category:Chang-Sup Lee of Hwaseong-si KR]]

[[:Category:Seong Soon Cho of Suwon-si KR|Seong Soon Cho of Suwon-si KR]][[Category:Seong Soon Cho of Suwon-si KR]]

[[:Category:Jeehoon Han of Hwaseong-si KR|Jeehoon Han of Hwaseong-si KR]][[Category:Jeehoon Han of Hwaseong-si KR]]

==THREE-DIMENSIONAL SEMICONDUCTOR DEVICE==


This abstract first appeared for US patent application 20250096135 titled 'THREE-DIMENSIONAL SEMICONDUCTOR DEVICE

==Original Abstract Submitted==

a three-dimensional (3d) semiconductor device includes a stack structure including first and second stacks stacked on a substrate. each of the first and second stacks includes a first electrode and a second electrode on the first electrode. a sidewall of the second electrode of the first stack is horizontally spaced apart from a sidewall of the second electrode of the second stack by a first distance. a sidewall of the first electrode is horizontally spaced apart from the sidewall of the second electrode by a second distance in each of the first and second stacks. the second distance is smaller than a half of the first distance.



[[Category:H01L23/528]]
[[Category:H01L21/768]]
[[Category:H01L23/522]]
[[Category:H10B41/20]]
[[Category:H10B41/27]]
[[Category:H10B43/10]]
[[Category:H10B43/20]]
[[Category:H10B43/27]]
[[Category:H10B43/35]]
[[Category:H10B43/50]]
[[Category:CPC_H01L23/5283]]