View source for Samsung electronics co., ltd. (20240332378). SEMICONDUCTOR DEVICE simplified abstract

=SEMICONDUCTOR DEVICE=


==Organization Name==

[[:Category:samsung electronics co., ltd.|samsung electronics co., ltd.]]


[[Category:samsung electronics co., ltd.]]

==Inventor(s)==

[[:Category:Younggwon Kim of Suwon-si (KR)|Younggwon Kim of Suwon-si (KR)]][[Category:Younggwon Kim of Suwon-si (KR)]]

[[:Category:Seung Geun Jung of Suwon-si (KR)|Seung Geun Jung of Suwon-si (KR)]][[Category:Seung Geun Jung of Suwon-si (KR)]]

[[:Category:Myung Gil Kang of Suwon-si (KR)|Myung Gil Kang of Suwon-si (KR)]][[Category:Myung Gil Kang of Suwon-si (KR)]]

[[:Category:Gyeom Kim of Suwon-si (KR)|Gyeom Kim of Suwon-si (KR)]][[Category:Gyeom Kim of Suwon-si (KR)]]

[[:Category:Dongwon Kim of Suwon-si (KR)|Dongwon Kim of Suwon-si (KR)]][[Category:Dongwon Kim of Suwon-si (KR)]]

==SEMICONDUCTOR DEVICE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240332378 titled 'SEMICONDUCTOR DEVICE

'''Simplified Explanation''': 

This patent application describes a semiconductor device with various patterns and layers, including a substrate, lower pattern, channel pattern, source/drain pattern, gate structure, contact electrode, etch stop layer, and contact interface layer.

* The semiconductor device includes a substrate with multiple patterns and layers.
* It features a gate structure surrounding the channel pattern and source/drain patterns on both sides.
* The contact electrode is electrically connected to the source/drain pattern.
* An etch stop layer is positioned between the gate structure and the contact electrode.
* The contact interface layer includes two regions, one between the source/drain pattern and the contact electrode, and the other between the source/drain pattern and the etch stop layer.

'''Key Features and Innovation''':

* Integration of multiple patterns and layers in a semiconductor device.
* Use of an etch stop layer to improve device performance.
* Design of a contact interface layer with distinct regions for enhanced functionality.

'''Potential Applications''':

* Semiconductor manufacturing industry.
* Electronics and technology sector for various devices.

'''Problems Solved''':

* Enhanced device performance.
* Improved electrical connectivity.
* Better control over semiconductor processes.

'''Benefits''':

* Higher efficiency in semiconductor devices.
* Improved reliability and durability.
* Enhanced overall device performance.

'''Commercial Applications''''':

* Potential use in smartphones, computers, and other electronic devices.
* Semiconductor manufacturing companies can benefit from this technology.

'''Questions about Semiconductor Devices''':
 
1. How does the etch stop layer contribute to the performance of the semiconductor device?
2. What are the specific advantages of the contact interface layer in this semiconductor device design?


==Original Abstract Submitted==

a semiconductor device may include a substrate, a lower pattern on the substrate, a channel pattern on the lower pattern, a source/drain pattern on both sides of the channel pattern, a gate structure surrounding the channel pattern, a contact electrode electrically connected to the source/drain pattern, an etch stop layer between the gate structure and the contact electrode, and a contact interface layer on the source/drain pattern. the contact interface layer may include a first region between the source/drain pattern and the contact electrode and a second region between the source/drain pattern and the etch stop layer.



[[Category:H01L29/417]]
[[Category:H01L21/768]]
[[Category:H01L23/522]]
[[Category:H01L29/08]]
[[Category:H01L29/40]]
[[Category:CPC_H01L29/41733]]