View source for Samsung electronics co., ltd. (20240292600). MEMORY DEVICE simplified abstract

=MEMORY DEVICE=


==Organization Name==

[[:Category:samsung electronics co., ltd.|samsung electronics co., ltd.]]


[[Category:samsung electronics co., ltd.]]

==Inventor(s)==

[[:Category:Min Tae Ryu of Suwon-si (KR)|Min Tae Ryu of Suwon-si (KR)]][[Category:Min Tae Ryu of Suwon-si (KR)]]

[[:Category:Byong-Deok Choi of Seoul (KR)|Byong-Deok Choi of Seoul (KR)]][[Category:Byong-Deok Choi of Seoul (KR)]]

[[:Category:Sungwon Yoo of Suwon-si (KR)|Sungwon Yoo of Suwon-si (KR)]][[Category:Sungwon Yoo of Suwon-si (KR)]]

[[:Category:Wonsok Lee of Suwon-si (KR)|Wonsok Lee of Suwon-si (KR)]][[Category:Wonsok Lee of Suwon-si (KR)]]

[[:Category:Yongsang Yoo of Seoul (KR)|Yongsang Yoo of Seoul (KR)]][[Category:Yongsang Yoo of Seoul (KR)]]

==MEMORY DEVICE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240292600 titled 'MEMORY DEVICE

The abstract describes a memory device with two memory cells connected to separate bitlines. The first memory cell consists of a transistor and a capacitor, with the transistor connected to the first bitline and the capacitor connected to the second bitline.

* The memory device includes a first memory cell with a first access transistor and a first capacitor.
* The first access transistor is connected to the first bitline.
* The first capacitor has one electrode connected to the transistor and another electrode connected to the second bitline.
* The first access transistor is made of an oxide semiconductor.

Potential Applications:
- This memory device can be used in various electronic devices such as smartphones, computers, and IoT devices.
- It can also be utilized in data storage systems and embedded systems.

Problems Solved:
- Provides a compact and efficient memory storage solution.
- Enhances data retention and access speed in electronic devices.

Benefits:
- Improved memory performance.
- Reduced power consumption.
- Enhanced overall device efficiency.

Commercial Applications:
Title: "Innovative Memory Device for Enhanced Data Storage"
This technology can be commercialized by memory chip manufacturers for integration into their products, leading to faster and more reliable electronic devices. The market implications include increased demand for high-performance memory solutions in various industries.

Prior Art:
Readers can explore prior patents related to memory devices, oxide semiconductors, and memory cell structures to gain a deeper understanding of the technological advancements in this field.

Frequently Updated Research:
Researchers are constantly working on improving memory devices' performance, durability, and efficiency. Stay updated on the latest developments in memory technology to leverage the benefits of cutting-edge innovations.

Questions about Memory Devices:
1. How does the use of oxide semiconductors impact the performance of memory devices?
   - Oxide semiconductors in memory devices can enhance speed and efficiency due to their unique electrical properties.
2. What are the key differences between memory cells with transistors and capacitors compared to other memory technologies?
   - Memory cells with transistors and capacitors offer faster access times and higher storage capacities compared to traditional memory technologies like magnetic storage.


==Original Abstract Submitted==

a memory device includes a first memory cell connected to a first bitline and a second memory cell connected to a second bitline, wherein the first memory cell may include a first access transistor including one end connected to the first bitline, and a first capacitor including one electrode connected to another end of the first access transistor and another electrode connected to the second bitline, and the first access transistor may include an oxide semiconductor.



[[Category:H10B12/00]]
[[Category:G11C11/4091]]
[[Category:G11C11/4094]]
[[Category:G11C11/4097]]
[[Category:CPC_H10B12/482]]