View source for Samsung electronics co., ltd. (20240176247). EUV LIGHT UNIFORMITY CONTROL APPARATUS, EUV EXPOSURE EQUIPMENT INCLUDING THE SAME, AND METHOD OF CONTROLLING EUV LIGHT UNIFORMITY BY USING THE CONTROL APPARATUS simplified abstract

=EUV LIGHT UNIFORMITY CONTROL APPARATUS, EUV EXPOSURE EQUIPMENT INCLUDING THE SAME, AND METHOD OF CONTROLLING EUV LIGHT UNIFORMITY BY USING THE CONTROL APPARATUS=


==Organization Name==

[[:Category:samsung electronics co., ltd.|samsung electronics co., ltd.]]


[[Category:samsung electronics co., ltd.]]

==Inventor(s)==

[[:Category:EUNHEE Jeang of SUWON-SI (KR)|EUNHEE Jeang of SUWON-SI (KR)]][[Category:EUNHEE Jeang of SUWON-SI (KR)]]

[[:Category:JEONGGIL Kim of SUWON-SI (KR)|JEONGGIL Kim of SUWON-SI (KR)]][[Category:JEONGGIL Kim of SUWON-SI (KR)]]

==EUV LIGHT UNIFORMITY CONTROL APPARATUS, EUV EXPOSURE EQUIPMENT INCLUDING THE SAME, AND METHOD OF CONTROLLING EUV LIGHT UNIFORMITY BY USING THE CONTROL APPARATUS - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240176247 titled 'EUV LIGHT UNIFORMITY CONTROL APPARATUS, EUV EXPOSURE EQUIPMENT INCLUDING THE SAME, AND METHOD OF CONTROLLING EUV LIGHT UNIFORMITY BY USING THE CONTROL APPARATUS

==Simplified Explanation==

The extreme ultraviolet (EUV) light uniformity control apparatus described in the abstract consists of nano thin-films arranged under a reticle of EUV exposure equipment to control the uniformity of EUV light projected onto a wafer, which is the exposure target.

* Nano thin-films with band shapes are linearly arranged under the reticle of EUV exposure equipment.
* Thin film mounts fix the nano thin-films on both sides in the scanning direction.
* A thin film control device is connected to the thin film mounts to control the nano thin-films.
* EUV light passes through the nano thin-films twice, being incident to and reflected from the reticle, before being projected onto the wafer for uniform adjustment.

== Potential Applications ==
This technology can be applied in semiconductor manufacturing processes where precise control of EUV light uniformity is crucial for achieving high-quality results.

== Problems Solved ==
This technology solves the problem of non-uniform exposure of EUV light onto wafers, which can lead to defects in semiconductor devices.

== Benefits ==
The benefits of this technology include improved accuracy and consistency in EUV light exposure, leading to higher yields and better performance in semiconductor manufacturing.

== Potential Commercial Applications ==
A potential commercial application of this technology is in the production of advanced semiconductor devices where EUV lithography is used for high-resolution patterning.

== Possible Prior Art ==
One possible prior art for this technology could be the use of optical elements or masks to control light uniformity in lithography processes.

=== Unanswered Questions ===

== How does the thin film control device precisely adjust the nano thin-films to achieve uniform EUV light projection onto the wafer? ==
The exact mechanism of how the thin film control device operates to control the nano thin-films is not detailed in the abstract. Further information on this aspect would provide a clearer understanding of the technology.

== Are there any limitations or constraints in the implementation of this technology in industrial settings? ==
The abstract does not mention any potential limitations or constraints that may arise when implementing this technology in industrial settings. Understanding any challenges faced during practical application would be beneficial for potential users.


==Original Abstract Submitted==

an extreme ultraviolet (euv) light uniformity control apparatus includes a plurality of nano thin-films each having a band shape extending in a first direction that is a scanning direction of euv exposure equipment and linearly arranged under a reticle of the euv exposure equipment in a second direction that is perpendicular to the first direction. the apparatus further includes thin film mounts fixing the nano thin-films on both sides in the first direction, and a thin film control device connected to the thin film mounts and controlling the nano thin-films. euv light from the euv exposure equipment is projected onto a wafer that is an exposure target, after passing through the nano thin-films twice by being incident to and reflected from the reticle, and the euv light projected on the wafer is uniformly adjusted by using the thin film control device.



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