View source for Samsung electronics co., ltd. (20240120360). METHOD AND SYSTEM FOR LIGHT ABSORPTION ENHANCEMENT IN PHOTODIODES USING ON-CHIP PHASE MODULATING THIN-FILM OPTICS, RESONANT STRUCTURES AND METASURFACES simplified abstract

=METHOD AND SYSTEM FOR LIGHT ABSORPTION ENHANCEMENT IN PHOTODIODES USING ON-CHIP PHASE MODULATING THIN-FILM OPTICS, RESONANT STRUCTURES AND METASURFACES=


==Organization Name==

[[:Category:samsung electronics co., ltd.|samsung electronics co., ltd.]]


[[Category:samsung electronics co., ltd.]]

==Inventor(s)==

[[:Category:Radwanul Hasan Siddique of Monrovia CA (US)|Radwanul Hasan Siddique of Monrovia CA (US)]][[Category:Radwanul Hasan Siddique of Monrovia CA (US)]]

[[:Category:Yibing Michelle Wang of Temple City CA (US)|Yibing Michelle Wang of Temple City CA (US)]][[Category:Yibing Michelle Wang of Temple City CA (US)]]

[[:Category:Mahsa Torfeh of Los Angeles CA (US)|Mahsa Torfeh of Los Angeles CA (US)]][[Category:Mahsa Torfeh of Los Angeles CA (US)]]

[[:Category:Tze-Ching Fung of Diamond Bar CA (US)|Tze-Ching Fung of Diamond Bar CA (US)]][[Category:Tze-Ching Fung of Diamond Bar CA (US)]]

==METHOD AND SYSTEM FOR LIGHT ABSORPTION ENHANCEMENT IN PHOTODIODES USING ON-CHIP PHASE MODULATING THIN-FILM OPTICS, RESONANT STRUCTURES AND METASURFACES - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240120360 titled 'METHOD AND SYSTEM FOR LIGHT ABSORPTION ENHANCEMENT IN PHOTODIODES USING ON-CHIP PHASE MODULATING THIN-FILM OPTICS, RESONANT STRUCTURES AND METASURFACES

==Simplified Explanation==

The abstract describes a pixel for an image sensor that includes a photodiode, a thin-film layer, and a reflective layer. The photodiode receives incident light on one side and has a thin-film layer on the other side that provides a unidirectional phase-shift to the light passing through it. The thin-film layer has a lower refractive index than the material forming the photodiode. The reflective layer is on the opposite side of the photodiode and reflects light back towards the photodiode.

* Photodiode with a thin-film layer and a reflective layer
* Thin-film layer provides a unidirectional phase-shift to light passing through it
* Reflective layer reflects light back towards the photodiode

== Potential Applications ==
This technology could be used in:
* Digital cameras
* Smartphones
* Surveillance cameras

== Problems Solved ==
This technology helps in:
* Improving image quality
* Enhancing light sensitivity
* Reducing noise in images

== Benefits ==
The benefits of this technology include:
* Higher quality images
* Better low-light performance
* Reduced noise in images

== Potential Commercial Applications ==
This technology could be commercially applied in:
* Consumer electronics
* Security systems
* Medical imaging devices

== Possible Prior Art ==
One possible prior art for this technology could be the use of thin-film layers in image sensors to improve light sensitivity and image quality.

=== Unanswered Questions ===

=== How does this technology compare to existing image sensor technologies in terms of performance and cost? ===
This article does not provide a direct comparison with existing image sensor technologies in terms of performance and cost. It would be helpful to understand how this technology stacks up against current solutions in the market.

=== What are the potential challenges in implementing this technology on a large scale for mass production? ===
The article does not address the potential challenges in scaling up production of image sensors using this technology. It would be important to consider factors such as manufacturing complexity, cost implications, and compatibility with existing production processes.


==Original Abstract Submitted==

a pixel for an image sensor is disclosed that includes a photodiode, a thin-film layer and a reflective layer. the photodiode includes a first side and a second side that is opposite the first side, and receives incident light on the first side. the thin-film layer is formed on the first side of the photodiode and provides a unidirectional phase-shift to light passing from the photodiode to the thin-film layer. the thin-film layer has a refractive index that less than a refractive index of material forming the photodiode. the unidirectional phase-shift may be a unidirectional it phase shift at a target near-infrared light wavelength. the reflective layer is formed on the second side of the photodiode and reflects light passing from the photodiode to the reflective layer toward the first side of the photodiode. the reflective layer may be a thin-film layer, a distributed bragg reflector layer, or a metal.



[[Category:H01L27/146]]