View source for Samsung electronics co., ltd. (20240118627). METHOD OF CORRECTING OVERLAY, METHOD OF CONTROLLING SEMICONDUCTOR PROCESS, AND SEMICONDUCTOR PROCESSING APPARATUS simplified abstract

=METHOD OF CORRECTING OVERLAY, METHOD OF CONTROLLING SEMICONDUCTOR PROCESS, AND SEMICONDUCTOR PROCESSING APPARATUS=


==Organization Name==

[[:Category:samsung electronics co., ltd.|samsung electronics co., ltd.]]


[[Category:samsung electronics co., ltd.]]

==Inventor(s)==

[[:Category:Jeongjin Lee of Suwon-si (KR)|Jeongjin Lee of Suwon-si (KR)]][[Category:Jeongjin Lee of Suwon-si (KR)]]

[[:Category:Inbeom Yim of Suwon-si (KR)|Inbeom Yim of Suwon-si (KR)]][[Category:Inbeom Yim of Suwon-si (KR)]]

==METHOD OF CORRECTING OVERLAY, METHOD OF CONTROLLING SEMICONDUCTOR PROCESS, AND SEMICONDUCTOR PROCESSING APPARATUS - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240118627 titled 'METHOD OF CORRECTING OVERLAY, METHOD OF CONTROLLING SEMICONDUCTOR PROCESS, AND SEMICONDUCTOR PROCESSING APPARATUS

==Simplified Explanation==

The patent application describes a method of correcting overlay errors in the formation of patterns on semiconductor devices using extreme ultraviolet light.

* Forming first patterns in first shot areas using extreme ultraviolet light reflected from a first mask to a first layer.
* Forming second patterns in second shot areas using extreme ultraviolet light reflected from a second mask to a second layer.
* Matching a pair of second shot areas to each of the first shot areas.
* Generating first and second correction parameters to correct overlay errors of the second patterns.

== Potential Applications ==
This technology can be applied in the semiconductor industry for the production of advanced integrated circuits with high precision and accuracy.

== Problems Solved ==
This technology solves the problem of overlay errors in the fabrication process of semiconductor devices, ensuring the alignment and accuracy of patterns on different layers.

== Benefits ==
The benefits of this technology include improved yield rates, increased production efficiency, and enhanced performance of semiconductor devices.

== Potential Commercial Applications ==
* "Improving Overlay Correction in Semiconductor Fabrication Processes"

== Possible Prior Art ==
One possible prior art in this field is the use of optical lithography techniques for pattern formation in semiconductor devices.

== Unanswered Questions ==

=== How does this method compare to other existing overlay correction techniques in terms of accuracy and efficiency? ===
The article does not provide a direct comparison with other existing overlay correction techniques, leaving room for further analysis and evaluation.

=== What are the limitations or challenges associated with implementing this method in large-scale semiconductor manufacturing facilities? ===
The article does not address the potential limitations or challenges of implementing this method in real-world production environments, which could impact its practicality and scalability.


==Original Abstract Submitted==

a method of correcting overlay includes forming first patterns in a plurality of first shot areas by radiating extreme ultraviolet light reflected from a first mask to a first layer; forming second patterns in each of a plurality of second shot areas by radiating extreme ultraviolet light reflected from a second mask to a second layer; matching a pair of second shot areas to each of the first shot areas; and generating first and second correction parameters for correcting an overlay error of the second patterns, wherein the first correction parameter is configured to correct an overlay error of each of the second shot areas based on the first shot area matched to each of the second shot areas, and the second correction parameter is configured to correct an overlay error between the pair of second shot areas matched to each of the first shot areas.



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