View source for Samsung electronics co., ltd. (20240105603). SEMICONDUCTOR DEVICE INCLUDING VARIABLE RESISTANCE PATTERN AND ELECTRONIC SYSTEM INCLUDING THE SEMICONDUCTOR DEVICE simplified abstract

=SEMICONDUCTOR DEVICE INCLUDING VARIABLE RESISTANCE PATTERN AND ELECTRONIC SYSTEM INCLUDING THE SEMICONDUCTOR DEVICE=


==Organization Name==

[[:Category:samsung electronics co., ltd.|samsung electronics co., ltd.]]


[[Category:samsung electronics co., ltd.]]

==Inventor(s)==

[[:Category:Hyunmog Park of Suwon-si (KR)|Hyunmog Park of Suwon-si (KR)]][[Category:Hyunmog Park of Suwon-si (KR)]]

==SEMICONDUCTOR DEVICE INCLUDING VARIABLE RESISTANCE PATTERN AND ELECTRONIC SYSTEM INCLUDING THE SEMICONDUCTOR DEVICE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240105603 titled 'SEMICONDUCTOR DEVICE INCLUDING VARIABLE RESISTANCE PATTERN AND ELECTRONIC SYSTEM INCLUDING THE SEMICONDUCTOR DEVICE

==Simplified Explanation==

The semiconductor device described in the abstract includes gate lines, a conductive layer, a conductive pad, and a channel structure with a variable resistance pattern. The channel structure has a columnar space with a first channel end in contact with the conductive pad and a second channel end in contact with the conductive layer. The variable resistance pattern overlaps the gate lines in a horizontal direction with the channel region in between, and is offset from at least one adjacent gate line.

* Gate lines spaced apart from each other
* Channel structure with variable resistance pattern
* Columnar space defined by channel region
* First and second channel ends in contact with conductive pad and layer
* Variable resistance pattern overlapping gate lines
* Offset from adjacent gate lines

== Potential Applications ==
The technology described in the patent application could potentially be used in:
* Semiconductor devices
* Memory storage devices
* Integrated circuits

== Problems Solved ==
This technology helps in:
* Improving conductivity
* Enhancing data storage capacity
* Increasing efficiency of semiconductor devices

== Benefits ==
The benefits of this technology include:
* Enhanced performance of semiconductor devices
* Increased data storage capabilities
* Improved overall efficiency

== Potential Commercial Applications ==
The technology could have commercial applications in:
* Electronics industry
* Semiconductor manufacturing companies
* Memory storage device manufacturers

== Possible Prior Art ==
One possible prior art for this technology could be the use of variable resistance patterns in semiconductor devices to improve performance and efficiency.

=== Unanswered Questions ===

=== How does the variable resistance pattern impact the overall conductivity of the semiconductor device? ===
The variable resistance pattern helps in controlling the flow of current through the device, thereby affecting its overall conductivity.

=== What materials are typically used in the construction of the channel structure and the variable resistance pattern? ===
Materials such as silicon, germanium, or other semiconductor materials are commonly used in the construction of the channel structure and the variable resistance pattern in semiconductor devices.


==Original Abstract Submitted==

a semiconductor device is provided. the semiconductor device includes: gate lines spaced apart from each other between a conductive layer and a conductive pad; and a channel structure extending through the gate lines. the channel structure includes: a channel region which defines a columnar space, and includes a first channel end in contact with the conductive pad and a second channel end in contact with the conductive layer; and a variable resistance pattern including an outer sidewall and a first end, the outer sidewall overlapping first gate lines, from among the gate lines, in a horizontal direction with the channel region therebetween, the first end being spaced apart from the first channel end of the channel region, and the variable resistance pattern being offset from, in the horizontal direction, at least one second gate line, from among the gate lines, that is adjacent to the conductive pad.



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