View source for SEMICONDUCTOR MEMORY DEVICE: abstract simplified (18175445)

*This abstract for appeared for patent application  number 18175445 Titled 'SEMICONDUCTOR MEMORY DEVICE'

==Simplified Explanation==

This abstract describes a semiconductor memory device that consists of multiple memory cells arranged on a substrate. Each memory cell includes two transistors. The first transistor has a channel region between a source region and a drain region, a gate electrode, and a gate insulating layer. The second transistor is stacked on top of the first transistor and has a pillar structure with a drain region, a channel region, and a source region. It also has a gate electrode and a gate insulating layer. The drain and source regions of the second transistor have different types of impurity regions.


==Original Abstract Submitted==

A semiconductor memory device includes a plurality of memory cells arranged on a substrate. Each of the plurality of memory cells may include a first transistor on the substrate and a second transistor on the first transistor. The first transistor may include a first channel region between a first source region and a first drain region, a first gate electrode, and a first gate insulating layer. The second transistor may include a pillar structure having a second drain region, a second channel region and a second source region sequentially stacked on the first gate electrode, a second gate electrode on one side of the second channel region, and a second gate insulating layer between the second channel region and the second gate electrode. The second drain region and the second source region may have a first conductivity type impurity region and a second conductivity type impurity region, respectively.