View source for SEMICONDUCTOR DEVICE: abstract simplified (18127895)

*This abstract for appeared for patent application  number 18127895 Titled 'SEMICONDUCTOR DEVICE'

==Simplified Explanation==

The abstract describes a semiconductor device that includes various components such as a substrate, active pattern, gate electrode, source/drain region, interlayer insulating layer, sacrificial layer, lower wiring layer, through via trench, through via, recess, and through via insulating layer. These components are arranged in a specific configuration to enable the device to function effectively.


==Original Abstract Submitted==

A semiconductor device is provided. The semiconductor device includes: a first substrate; an active pattern extending on the first substrate; a gate electrode extending on the active pattern; a source/drain region on the active pattern; a first interlayer insulating layer on the source/drain region; a sacrificial layer on the first substrate; a lower wiring layer on a lower surface of the sacrificial layer; a through via trench extending to the lower wiring layer by passing through the first interlayer insulating layer and the sacrificial layer in a vertical direction; a through via inside the through via trench and connected to the lower wiring layer; a recess inside the sacrificial layer and protruding from a sidewall of the through via trench in the second horizontal direction; and a through via insulating layer extending along the sidewall of the through via trench and into the recess.