View source for Qualcomm incorporated (20250098256). SELF-ALIGNED BACKSIDE INTERCONNECT

=SELF-ALIGNED BACKSIDE INTERCONNECT=


==Organization Name==

[[:Category:qualcomm incorporated|qualcomm incorporated]]


[[Category:qualcomm incorporated]]

==Inventor(s)==

[[:Category:Yan Sun of San Diego CA US|Yan Sun of San Diego CA US]][[Category:Yan Sun of San Diego CA US]]

[[:Category:Shreesh Narasimha of Charlotte NC US|Shreesh Narasimha of Charlotte NC US]][[Category:Shreesh Narasimha of Charlotte NC US]]

==SELF-ALIGNED BACKSIDE INTERCONNECT==


This abstract first appeared for US patent application 20250098256 titled 'SELF-ALIGNED BACKSIDE INTERCONNECT

==Original Abstract Submitted==

disclosed are techniques for a semiconductor structure. in an aspect, a semiconductor structure includes a gate stack extending along a first direction in a front portion of the semiconductor structure, the gate stack including a first gate structure; a first channel structure disposed through the first gate structure and extending along a second direction; a first source/drain (s/d) structure adjacent the first gate structure and electrically coupled to the first channel structure; a backside dielectric layer disposed in a back portion of the semiconductor structure opposing the front portion; and a backside conductive structure in contact with the first s/d structure and disposed at least partially in the back portion of the semiconductor structure and through the backside dielectric layer. the backside conductive structure has a length in the first direction greater than a width of the first channel structure in the first direction.



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