View source for Qualcomm incorporated (20240321860). ROW CELL CIRCUITS WITH ABRUPT DIFFUSION REGION WIDTH TRANSITIONS simplified abstract

=ROW CELL CIRCUITS WITH ABRUPT DIFFUSION REGION WIDTH TRANSITIONS=


==Organization Name==

[[:Category:qualcomm incorporated|qualcomm incorporated]]


[[Category:qualcomm incorporated]]

==Inventor(s)==

[[:Category:Haining Yang of San Diego CA (US)|Haining Yang of San Diego CA (US)]][[Category:Haining Yang of San Diego CA (US)]]

[[:Category:Junjing Bao of San Diego CA (US)|Junjing Bao of San Diego CA (US)]][[Category:Junjing Bao of San Diego CA (US)]]

[[:Category:Hyunwoo Park of San Diego CA (US)|Hyunwoo Park of San Diego CA (US)]][[Category:Hyunwoo Park of San Diego CA (US)]]

[[:Category:Kwanyong Lim of San Diego CA (US)|Kwanyong Lim of San Diego CA (US)]][[Category:Kwanyong Lim of San Diego CA (US)]]

==ROW CELL CIRCUITS WITH ABRUPT DIFFUSION REGION WIDTH TRANSITIONS - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240321860 titled 'ROW CELL CIRCUITS WITH ABRUPT DIFFUSION REGION WIDTH TRANSITIONS

**Simplified Explanation:**
The patent application describes the implementation of logic circuits in row cell circuits with diffusion regions. The width of each diffusion region portion determines the current capacity of the transistor in the circuit. The patent introduces a design where two diffusion region portions with different widths intersect along an axis, creating a square corner transition in width. This transition is achieved by square corner features formed in the diffusion region.

**Key Features and Innovation:**
- Logic circuits implemented in row cell circuits with diffusion regions
- Current capacity of transistors determined by diffusion region width
- Introduction of square corner features for abrupt width transitions in diffusion regions

**Potential Applications:**
- Semiconductor manufacturing
- Integrated circuit design
- Electronics industry

**Problems Solved:**
- Achieving abrupt width transitions in diffusion regions
- Enhancing current capacity control in transistors
- Overcoming limitations in small technology nodes

**Benefits:**
- Improved performance of logic circuits
- Enhanced precision in current capacity control
- Facilitates design of complex integrated circuits

**Commercial Applications:**
Title: Advanced Semiconductor Manufacturing Technology for Enhanced Circuit Performance
This technology can be utilized in the production of high-performance integrated circuits for various electronic devices, such as smartphones, computers, and IoT devices. It can also benefit semiconductor manufacturers looking to enhance the efficiency and reliability of their products.

**Prior Art:**
Prior art related to this technology may include research on transistor design and diffusion region control in semiconductor manufacturing processes. Researchers and industry experts in the field of integrated circuit design may have explored similar concepts in the past.

**Frequently Updated Research:**
Researchers in the semiconductor industry may be conducting ongoing studies on transistor design, diffusion region control, and advanced manufacturing techniques to further improve the performance and efficiency of integrated circuits.

**Questions about Semiconductor Manufacturing:**
1. How does the width of diffusion regions impact the current capacity of transistors in logic circuits?
2. What are the key challenges in achieving precise width transitions in diffusion regions for semiconductor manufacturing?


==Original Abstract Submitted==

logic circuits are implemented in row cell circuits that include diffusion regions. each diffusion region portion is employed by a transistor in a cell circuit. a current capacity of each transistor depends on a width of the diffusion region portion. a first diffusion region portion and a second diffusion region portion having different widths intersect along an axis, where the diffusion region of a row cell circuit abruptly transitions (e.g., at a square corner) in width. a gate disposed over the diffusion region along the intersection includes a first side on the first diffusion region portion and a second side on the second diffusion region portion. the transition occurring between the first side and the second side of the gate may be achieved by square corner features formed in the diffusion region. such features were not previously achievable at small technology nodes due to mask pattern limitations.



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