View source for Qualcomm incorporated (20240321709). PACKAGE COMPRISING AN INTEGRATED DEVICE AND A METALLIZATION PORTION WITH VARIABLE THICKNESS METALLIZATION INTERCONNECTS ON A SAME METAL LAYER simplified abstract

=PACKAGE COMPRISING AN INTEGRATED DEVICE AND A METALLIZATION PORTION WITH VARIABLE THICKNESS METALLIZATION INTERCONNECTS ON A SAME METAL LAYER=


==Organization Name==

[[:Category:qualcomm incorporated|qualcomm incorporated]]


[[Category:qualcomm incorporated]]

==Inventor(s)==

[[:Category:Aniket Patil of San Diego CA (US)|Aniket Patil of San Diego CA (US)]][[Category:Aniket Patil of San Diego CA (US)]]

[[:Category:Brigham Navaja of San Diego CA (US)|Brigham Navaja of San Diego CA (US)]][[Category:Brigham Navaja of San Diego CA (US)]]

[[:Category:Hong Bok We of San Diego CA (US)|Hong Bok We of San Diego CA (US)]][[Category:Hong Bok We of San Diego CA (US)]]

==PACKAGE COMPRISING AN INTEGRATED DEVICE AND A METALLIZATION PORTION WITH VARIABLE THICKNESS METALLIZATION INTERCONNECTS ON A SAME METAL LAYER - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240321709 titled 'PACKAGE COMPRISING AN INTEGRATED DEVICE AND A METALLIZATION PORTION WITH VARIABLE THICKNESS METALLIZATION INTERCONNECTS ON A SAME METAL LAYER

The abstract describes a package consisting of an integrated device and a metallization portion, which includes dielectric layers and multiple metallization interconnects of varying thicknesses.

* The package includes a first metallization interconnect on a first metal layer and a second metallization interconnect also on the first metal layer.
* The first and second metallization interconnects have different thicknesses.
* The package may also contain a substrate and/or a bridge, with the substrate potentially being an interposer.

Potential Applications:
- This technology can be used in semiconductor packaging for integrated circuits.
- It can also be applied in electronic devices requiring precise metallization interconnects.

Problems Solved:
- Provides a solution for creating complex metallization structures in semiconductor packages.
- Offers a method for optimizing the thickness of metallization interconnects for improved performance.

Benefits:
- Enhanced performance and reliability of integrated devices.
- Increased efficiency in semiconductor packaging processes.

Commercial Applications:
Title: Advanced Metallization Technology for Semiconductor Packaging
This technology can be utilized in the semiconductor industry for manufacturing high-performance integrated circuits. It has the potential to streamline production processes and improve the quality of electronic devices.

Prior Art:
Readers can explore prior patents related to metallization techniques in semiconductor packaging to gain a deeper understanding of the evolution of this technology.

Frequently Updated Research:
Stay updated on the latest advancements in metallization technologies for semiconductor packaging to ensure the implementation of cutting-edge solutions in device manufacturing.

Questions about Metallization Technology:
1. What are the key factors influencing the choice of thickness for metallization interconnects in semiconductor packaging?
- The thickness of metallization interconnects is determined by factors such as electrical conductivity requirements, heat dissipation capabilities, and overall performance goals.

2. How does the integration of dielectric layers impact the functionality of metallization interconnects in semiconductor packages?
- Dielectric layers play a crucial role in insulating and protecting the metallization interconnects, ensuring proper functionality and reliability of the integrated device.


==Original Abstract Submitted==

a package comprising an integrated device and a metallization portion. the metallization portion comprises at least one dielectric layer and a plurality of metallization interconnects. the plurality of metallization interconnects comprise a first metallization interconnect located on a first metal layer and a second metallization interconnect located on the first metal layer. the first metallization interconnect includes a first thickness. the second metallization interconnect includes a second thickness that is different from the first thickness. the package may include a substrate and/or a bridge. the substrate may include an interposer.



[[Category:H01L23/498]]
[[Category:H01L23/00]]
[[Category:H01L23/538]]
[[Category:H01L25/065]]
[[Category:CPC_H01L23/49838]]