View source for Qualcomm incorporated (20240321631). BACK-END-OF-LINE (BEOL) INTERCONNECTS WITH DIFFERENT AIRGAP HEIGHTS AND METAL TRACE CORNER PROTECTION STRUCTURES simplified abstract

=BACK-END-OF-LINE (BEOL) INTERCONNECTS WITH DIFFERENT AIRGAP HEIGHTS AND METAL TRACE CORNER PROTECTION STRUCTURES=


==Organization Name==

[[:Category:qualcomm incorporated|qualcomm incorporated]]


[[Category:qualcomm incorporated]]

==Inventor(s)==

[[:Category:Xia Li of San Diego CA (US)|Xia Li of San Diego CA (US)]][[Category:Xia Li of San Diego CA (US)]]

[[:Category:Junjing Bao of San Diego CA (US)|Junjing Bao of San Diego CA (US)]][[Category:Junjing Bao of San Diego CA (US)]]

[[:Category:Bin Yang of San Diego CA (US)|Bin Yang of San Diego CA (US)]][[Category:Bin Yang of San Diego CA (US)]]

[[:Category:Biswa Ranjan Panda of Bangaluru (IN)|Biswa Ranjan Panda of Bangaluru (IN)]][[Category:Biswa Ranjan Panda of Bangaluru (IN)]]

[[:Category:Ramesh Manchana of Hyderabad (IN)|Ramesh Manchana of Hyderabad (IN)]][[Category:Ramesh Manchana of Hyderabad (IN)]]

==BACK-END-OF-LINE (BEOL) INTERCONNECTS WITH DIFFERENT AIRGAP HEIGHTS AND METAL TRACE CORNER PROTECTION STRUCTURES - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240321631 titled 'BACK-END-OF-LINE (BEOL) INTERCONNECTS WITH DIFFERENT AIRGAP HEIGHTS AND METAL TRACE CORNER PROTECTION STRUCTURES

==Simplified Explanation==
The patent application describes an integrated circuit with advanced interconnects and layers to improve performance and efficiency.

* Back-end-of-line (BEOL) interconnects are placed in a first intermetal dielectric (IMD) layer on a substrate.
* Second BEOL interconnects are added on the first IMD layer, connected to the first BEOL interconnects through vias.
* A second IMD layer is applied to seal airgaps between the second BEOL interconnects.
* Etch stop spacers separate portions of the second BEOL interconnects from the second IMD layer.
* Third BEOL interconnects are placed on the second IMD layer, connected to the second BEOL interconnects through vias.

==Key Features and Innovation==
* Integration of multiple BEOL interconnect layers for enhanced performance.
* Sealing of airgaps between interconnects for improved efficiency.
* Use of etch stop spacers to separate interconnects from IMD layers.
* Multiple layers and vias for complex interconnect structures.

==Potential Applications==
The technology can be applied in various semiconductor devices, such as microprocessors, memory chips, and communication devices.

==Problems Solved==
* Enhanced performance and efficiency in integrated circuits.
* Improved signal transmission and reduced interference.
* Better heat dissipation and overall reliability.

==Benefits==
* Higher processing speeds and data transfer rates.
* Lower power consumption and improved battery life.
* Increased reliability and longevity of semiconductor devices.

==Commercial Applications==
The technology can be utilized in the production of advanced electronic devices, leading to faster and more reliable products in the market.

==Prior Art==
Readers can explore prior patents related to semiconductor interconnect technologies, such as IPC codes H01L and CPC codes H01L23.

==Frequently Updated Research==
Stay updated on the latest advancements in semiconductor interconnect technologies to understand the evolving landscape of integrated circuits.

==Questions about Semiconductor Interconnect Technologies==
===What are the key advantages of using multiple BEOL interconnect layers in integrated circuits?===
Multiple BEOL interconnect layers allow for more complex and efficient routing of signals, leading to improved performance and reduced signal interference.

===How do etch stop spacers contribute to the reliability of semiconductor devices?===
Etch stop spacers help to prevent unwanted interactions between interconnects and IMD layers, ensuring the integrity and longevity of the integrated circuit.


==Original Abstract Submitted==

an integrated circuit (ic) includes back-end-of-line (beol) interconnects in a first intermetal dielectric (imd) layer on a substrate. the ic also includes second beol interconnects on the first imd layer, coupled to the first beol interconnects through first beol vias in the first imd layer. the ic further includes a second imd layer on the second beol interconnects to seal airgaps between the plurality of second beol interconnects. the ic also includes etch stop spacers on portions of sidewalls of the second beol interconnects to separate the portions of the sidewalls from the second imd layer. the ic further includes third beol interconnects on the second imd layer and coupled to one or more of the second beol interconnects through second beol vias in the second imd layer.



[[Category:H01L21/768]]
[[Category:H01L23/522]]
[[Category:H01L23/532]]
[[Category:CPC_H01L21/7682]]