View source for Qualcomm incorporated (20240321369). DIELECTRIC FILM BASED ONE-TIME PROGRAMMABLE (OTP) MEMORY CELL simplified abstract

=DIELECTRIC FILM BASED ONE-TIME PROGRAMMABLE (OTP) MEMORY CELL=


==Organization Name==

[[:Category:qualcomm incorporated|qualcomm incorporated]]


[[Category:qualcomm incorporated]]

==Inventor(s)==

[[:Category:Abhijeet Paul of Escondido CA (US)|Abhijeet Paul of Escondido CA (US)]][[Category:Abhijeet Paul of Escondido CA (US)]]

[[:Category:Mishel Matloubian of San Diego CA (US)|Mishel Matloubian of San Diego CA (US)]][[Category:Mishel Matloubian of San Diego CA (US)]]

==DIELECTRIC FILM BASED ONE-TIME PROGRAMMABLE (OTP) MEMORY CELL - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240321369 titled 'DIELECTRIC FILM BASED ONE-TIME PROGRAMMABLE (OTP) MEMORY CELL

The semiconductor structure described in the patent application includes a conductive element on an isolation structure, a dielectric film, a first contact structure, and a second contact structure. The dielectric film acts as a resistive element when a dielectric breakdown occurs, with the first and second contact structures serving as terminals. In the absence of dielectric breakdown, the dielectric film functions as an insulator of a capacitive element, with the first and second contact structures as the terminals.

* The semiconductor structure features a unique dielectric film that can switch between resistive and capacitive elements based on dielectric breakdown.
* The first and second contact structures act as terminals for the resistive and capacitive elements, providing versatility in functionality.
* This innovation allows for efficient use of space and resources in semiconductor devices by combining multiple functions within a single component.

Potential Applications:
- This technology can be applied in integrated circuits, sensors, and other electronic devices requiring versatile dielectric properties.
- It may find use in power electronics, telecommunications, and automotive systems where space optimization is crucial.

Problems Solved:
- Addresses the need for compact and multifunctional components in semiconductor structures.
- Provides a solution for efficient utilization of dielectric materials in electronic devices.

Benefits:
- Enhanced functionality and space savings in semiconductor devices.
- Improved performance and reliability due to the versatile nature of the dielectric film.

Commercial Applications:
Title: Versatile Semiconductor Structure with Switchable Dielectric Properties
This technology has potential commercial applications in the semiconductor industry, particularly in the development of compact and multifunctional electronic components. It can cater to various sectors such as consumer electronics, automotive, and telecommunications, offering improved efficiency and performance in semiconductor devices.

Questions about Semiconductor Structure with Switchable Dielectric Properties:
1. How does the dielectric film switch between resistive and capacitive elements?
2. What are the key advantages of using this semiconductor structure in electronic devices?


==Original Abstract Submitted==

disclosed are techniques for a semiconductor structure. in an aspect, a semiconductor structure includes a conductive element on an isolation structure, a dielectric film, a first contact structure, wherein at least a portion of the dielectric film is disposed between the conductive element and the first contact structure, and a second contact structure disposed on and electrically coupled with the conductive element. the dielectric film is configured as a resistive element with the first contact structure and the second contact structure being terminals of the resistive element after a dielectric breakdown has occurred within the portion of the dielectric film. also, the dielectric film is configured as an insulator of a capacitive element with the first contact structure and the second contact structure being terminals of the capacitive element in a case that no dielectric breakdown has occurred within the portion of the dielectric film.



[[Category:G11C17/16]]
[[Category:G11C17/18]]
[[Category:H01L23/525]]
[[Category:H10B20/25]]
[[Category:CPC_G11C17/165]]