View source for NONVOLATILE MEMORY DEVICE: abstract simplified (18209983)

*This abstract for appeared for patent application  number 18209983 Titled 'NONVOLATILE MEMORY DEVICE'

==Simplified Explanation==

The abstract describes a nonvolatile memory device that has a substrate with a cell array region. It also has a first gate electrode with an opening on the cell array region. Stacked above the first gate electrode are multiple second gate electrodes, which have convex portions that curve outward towards the substrate. There is also a word line cutting region that cuts through the opening and the convex portions.


==Original Abstract Submitted==

A nonvolatile memory device includes a substrate including a cell array region, a first gate electrode including an opening on the cell array region of the substrate, a plurality of second gate electrodes stacked above the first gate electrode and including convex portions having an outward curve extending toward the substrate, and a word line cutting region cutting the opening and the convex portions.