View source for Micron technology, inc. (20250098159). MEMORY DEVICES INCLUDING PAD STRUCTURES

=MEMORY DEVICES INCLUDING PAD STRUCTURES=


==Organization Name==

[[:Category:micron technology, inc.|micron technology, inc.]]


[[Category:micron technology, inc.]]

==Inventor(s)==

[[:Category:Erwin E. Yu of San Jose CA US|Erwin E. Yu of San Jose CA US]][[Category:Erwin E. Yu of San Jose CA US]]

[[:Category:Michele Piccardi of Cupertino CA US|Michele Piccardi of Cupertino CA US]][[Category:Michele Piccardi of Cupertino CA US]]

[[:Category:Surendranath C. Eruvuru of Boise ID US|Surendranath C. Eruvuru of Boise ID US]][[Category:Surendranath C. Eruvuru of Boise ID US]]

==MEMORY DEVICES INCLUDING PAD STRUCTURES==


This abstract first appeared for US patent application 20250098159 titled 'MEMORY DEVICES INCLUDING PAD STRUCTURES

==Original Abstract Submitted==

a microelectronic device comprises a base structure, a memory array overlying the base structure, and a conductive pad tier overlying the memory array. the base structure comprises a logic region including logic devices. the memory array comprises vertically extending strings of memory cells within a horizontal area of the logic region of the base structure. the conductive pad tier comprises first conductive pads substantially outside of the horizontal area of the logic region of the base structure, and second conductive pads horizontally neighboring the first conductive pads and within the horizontal area of the logic region of the base structure. memory devices and electronic systems are also described.



[[Category:H10B41/27]]
[[Category:B81B1/00]]
[[Category:G11C5/02]]
[[Category:G11C5/06]]
[[Category:H01L23/538]]
[[Category:H01L27/092]]
[[Category:H10B43/27]]
[[Category:CPC_H10B41/27]]