View source for Micron technology, inc. (20240296896). READ DISTURB MITIGATION BASED ON SIGNAL AND NOISE CHARACTERISTICS OF MEMORY CELLS COLLECTED FOR READ CALIBRATION simplified abstract

=READ DISTURB MITIGATION BASED ON SIGNAL AND NOISE CHARACTERISTICS OF MEMORY CELLS COLLECTED FOR READ CALIBRATION=


==Organization Name==

[[:Category:micron technology, inc.|micron technology, inc.]]


[[Category:micron technology, inc.]]

==Inventor(s)==

[[:Category:Patrick Robert Khayat of San Diego CA (US)|Patrick Robert Khayat of San Diego CA (US)]][[Category:Patrick Robert Khayat of San Diego CA (US)]]

[[:Category:James Fitzpatrick of Laguna Niguel CA (US)|James Fitzpatrick of Laguna Niguel CA (US)]][[Category:James Fitzpatrick of Laguna Niguel CA (US)]]

[[:Category:AbdelHakim S. Alhussien of San Jose CA (US)|AbdelHakim S. Alhussien of San Jose CA (US)]][[Category:AbdelHakim S. Alhussien of San Jose CA (US)]]

[[:Category:Sivagnanam Parthasarathy of Carlsbad CA (US)|Sivagnanam Parthasarathy of Carlsbad CA (US)]][[Category:Sivagnanam Parthasarathy of Carlsbad CA (US)]]

==READ DISTURB MITIGATION BASED ON SIGNAL AND NOISE CHARACTERISTICS OF MEMORY CELLS COLLECTED FOR READ CALIBRATION - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240296896 titled 'READ DISTURB MITIGATION BASED ON SIGNAL AND NOISE CHARACTERISTICS OF MEMORY CELLS COLLECTED FOR READ CALIBRATION

==Simplified Explanation==
The patent application describes a memory device that can optimize read voltages and mitigate read disturb in memory cells.

* Measures signal and noise characteristics to determine optimized read voltage.
* Identifies memory cells for read disturb mitigation based on accumulated margin and a threshold.

==Key Features and Innovation==
* Optimization of read voltages for memory cells.
* Mitigation of read disturb in memory cells.
* Utilization of signal and noise characteristics for voltage determination.

==Potential Applications==
* Memory devices in electronic devices.
* Data storage systems.
* Embedded systems.

==Problems Solved==
* Read disturb in memory cells.
* Inefficient voltage optimization.
* Accurate margin determination.

==Benefits==
* Improved memory cell performance.
* Enhanced data integrity.
* Extended memory device lifespan.

==Commercial Applications==
Memory device manufacturers can utilize this technology to enhance the performance and reliability of their products, leading to increased customer satisfaction and potentially higher market share in the competitive memory device industry.

==Prior Art==
Readers interested in prior art related to this technology can explore research papers, patents, and industry publications in the field of memory devices, read disturb mitigation, and voltage optimization.

==Frequently Updated Research==
Researchers are constantly exploring new methods and technologies to improve memory device performance, mitigate read disturb, and optimize read voltages. Stay updated on the latest advancements in memory device technology to remain at the forefront of innovation.

==Questions about Memory Device Optimization==
===How does the memory device optimize read voltages?===
The memory device measures signal and noise characteristics of memory cells to determine an optimized read voltage, ensuring efficient and reliable operation.

===What are the potential applications of this technology beyond memory devices?===
This technology can also be applied in data storage systems, embedded systems, and other electronic devices to enhance performance and reliability.


==Original Abstract Submitted==

a memory device to perform a read disturb mitigation operation. for example, the memory device can measure signal and noise characteristics of a group of memory cells to determine an optimized read voltage of the group of memory cells and determine a margin of read disturb accumulated in the group of memory cells. subsequently, the memory device can identify the group of memory cells for the read disturb mitigation operation based on the margin of read disturb and a predetermined threshold.



[[Category:G11C16/34]]
[[Category:G06F18/214]]
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[[Category:G11C7/02]]
[[Category:G11C16/10]]
[[Category:G11C16/26]]
[[Category:G11C16/30]]
[[Category:CPC_G11C16/3431]]